Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers

Guangqing Liu,Qi Zhang,Hsin-Hui Huang,Paul Munroe,Valanoor Nagarajan,Hugh Simons,Zijian Hong,Long-Qing Chen
DOI: https://doi.org/10.1002/admi.201600444
IF: 5.4
2016-01-01
Advanced Materials Interfaces
Abstract:Polarization rotation engineering is a promising path to giant dielectric and electromechanical responses in ferroelectric materials and devices. This work demonstrates robust and reversible in‐ to out‐of‐plane polarization rotation in ultrathin (nanoscale) epitaxial (001) tetragonal PbZr0.3Ti0.7O3 (PZT‐T)/rhombohedral PbZr0.55Ti0.45O3 (PZT‐R) ferroelectric bilayers. An underlying 20 nm thick PZT‐R layer reduces the symmetry in a 5 nm thick PZT‐T layer by imposing an in‐plane tensile strain while simultaneously decoupling the PZT‐T layer from the substrate. This prevents clamping and facilitates large‐scale polarization rotation switching (≈60 μC cm−2) and an effective d 33 response 500% (≈250 pm V−1) larger than the PZT‐R layer alone. Furthermore, this enhancement is stable for more than 107 electrical switching cycles. These bilayers present a simple and highly controllable means to design and optimize rotational polar systems as an alternate to traditional composition‐based approaches. The precise control of the subtle interface‐driven interactions between the lattice and the external factors that control polarization opens a new door to enhanced—or completely new—functional properties.
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