Active Gate Driving Method for Reliability Improvement of IGBTs Via Junction Temperature Swing Reduction

Haoze Luo,Francesco Iannuzzo,Ke Ma,Frede Blaabjerg,Wuhua Li,Xiangning He
DOI: https://doi.org/10.1109/pedg.2016.7527079
2016-01-01
Abstract:This paper introduces an advanced gate driver used as thermal swing control method for the reduction of AC load current-related ΔT j in Insulated-Gate Bipolar Transistors (IGBTs). A switchable gate resistor network is applied to the advanced gate driver, so that the switching power losses can be changed according to the amplitude of AC current. Accordingly, a closed-loop thermal control method including the functions of root-mean-square calculation and phase analysis is proposed. Hence ΔT j can be reduced by means of changing losses-related gate resistors on the basis of output fundamental frequency and amplitude of AC load current. As a result, longer device useful life duration can be achieved. Furthermore, the maximum junction temperature under high-temperature operation can be reduced by means of the proposed method. Simulations and experiments are provided to validate the effectiveness of the proposed active gate driver.
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