Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Quantifying the Barrier Lowering of ZnO Schottky Nanodevices under UV Light.

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Enhancing Sensitivity of A Single Zno Micro-/Nanowire Photodetector by Piezo-Phototronic Effect

Clarifying the High On/off Ratio Mechanism of Nanowire UV Photodetector by Characterizing Surface Barrier Height

Interfacial State Induced Ultrasensitive Ultraviolet Light Photodetector with Resolved Flux Down to 85 Photons Per Second

High Efficiency Single Ag Nanowire/p-Gan Substrate Schottky Junction-Based Ultraviolet Light Emitting Diodes

Ultraviolet Electroluminescence from Au-Zno Nanowire Schottky Type Light-Emitting Diodes

Characterization of ZnO Nanowire Field-Effect Transistors Exposed to Ultraviolet Radiation

Influence of Illumination Intensity on the Electrical Characteristics and Photoresponsivity of the Ag/ZnO Schottky Diodes

Ultraviolet photodetectors based on ZnO nanowires with SiO<sub>2</sub>/ZnO multilayers

Influence Of Temperature And Illumination On Surface Barrier Of Individual Zno Nanowires

ZnO nanowire photodetectors based on Schottky contact with surface passivation

Schottky enabled enhanced UV photo-detection based on vertically aligned ZnO nanowire coated with TiO 2 -GO nanocomposites

Triboelectric-polarization-enhanced high sensitive ZnO UV sensor

Low-temperature-grown P-N ZnO Nanojunction Arrays As Rapid and Self-Driven UV Photodetectors.

Ultraviolet photodetectors based on ZnO nanowires with SiO2/ZnO multilayers

Synthesis, Characterization and UV Photodetector Application of Sb-doped ZnO Nanowires

Effect of surface states on electron transport in individual ZnO nanowires

Fabrication of P-Type Znse:Sb Nanowires for High-Performance Ultraviolet Light Photodetector Application

A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

Effects of ZnO Seed Layer Annealing Temperature on the Properties of N-Zno NWs/Al(2)O(3)/p-Si Heterojunction.