Effect of Doping Indium into a Bi2Te3 Matrix on the Microstructure and Thermoelectric Transport Properties

Xin Guo,Jieming Qin,Xiaoling Lv,Le Deng,Xiaopeng Jia,Hongan Ma,Hongsheng Jia

DOI: https://doi.org/10.1039/c6ra09767g

IF: 4.036

2016-01-01

RSC Advances

Abstract:Doping In into a Bi2Te3 matrix can significantly transform textural features and decrease the lattice thermal conductivity.

What problem does this paper attempt to address?

In-doping induced resonant level and thermoelectric performance enhancement in n-type GeBi 2 Te 4 single crystals with intrinsically low lattice thermal conductivity

Peng Chen,Bin Zhang,Hanjun Zou,Xiangnan Gong,Yanci Yan,Jingwei Li,Daliang Zhang,Guang Han,Xu Lu,Hong Wu,Yun Zhou,Xiaoyuan Zhou,Guoyu Wang

DOI: https://doi.org/10.1016/j.cej.2023.143529

IF: 15.1

2023-05-21

Chemical Engineering Journal

Abstract:Resonant level, the impurity level located inside the valence/conduction band, is an effective strategy for decoupling the electrical conductivity and Seebeck coefficient and enhancing the thermoelectric power factor. In this work, we show that In doping induces resonant level and enhances the thermoelectric performance of GeBi 2 Te 4 , a promising n-type thermoelectric material with layered structure. Single crystals grown by Bridgman method were used in this study to take the advantage of its anisotropic transport properties. An ultralow lattice thermal conductivity of ∼0.51 W m −1 K −1 at 323 K was found along the c -axis of GeBi 2 Te 4 , driven by intrinsic cation disorder and the low phonon group velocity from the relatively weak chemical bonds as well as the strong lattice anharmonicity caused by hierarchical bond orders. Both enhanced electrical conductivity and Seebeck coefficient were observed in the In-doped samples, indicating that In-doping not only increases the carrier concentration, but also introduces the resonant level that was further confirmed by the first-principles calculation. A maximum zT of ∼0.42 at 523 K and an average zT of 0.36 over 323 to 573 K were achieved in Ge 0.97 In 0.03 Bi 2 Te 4 crystal sample, ∼100% and ∼89% enhancement compared to those of pristine single crystal sample, respectively. This study demonstrates another example of resonant level for thermoelectric performance enhancement, which may be applied to other related materials.

engineering, chemical, environmental
Origin of the High Performance in GeTe-Based Thermoelectric Materials Upon Bi2Te3 Doping

Di Wu,Li-Dong Zhao,Shiqiang Hao,Qike Jiang,Fengshan Zheng,Jeff W. Doak,Haijun Wu,Hang Chi,Y. Gelbstein,C. Uher,C. Wolverton,Mercouri Kanatzidis,Jiaqing He

DOI: https://doi.org/10.1021/ja504896a

IF: 15

2014-01-01

Journal of the American Chemical Society

Abstract:As a lead-free material, GeTe has drawn growing attention in thermoelectrics, and a figure of merit (ZT) close to unity was previously obtained via traditional doping/alloying, largely through hole carrier concentration tuning. In this report, we show that a remarkably high ZT of ∼1.9 can be achieved at 773 K in Ge0.87Pb0.13Te upon the introduction of 3 mol % Bi2Te3. Bismuth telluride promotes the solubility of PbTe in the GeTe matrix, thus leading to a significantly reduced thermal conductivity. At the same time, it enhances the thermopower by activating a much higher fraction of charge transport from the highly degenerate Σ valence band, as evidenced by density functional theory calculations. These mechanisms are incorporated and discussed in a three-band (L + Σ + C) model and are found to explain the experimental results well. Analysis of the detailed microstructure (including rhombohedral twin structures) in Ge0.87Pb0.13Te + 3 mol % Bi2Te3 was carried out using transmission electron microscopy and crystallographic group theory. The complex microstructure explains the reduced lattice thermal conductivity and electrical conductivity as well.
Influence of Ag_2Te Doping on the Thermoelectric Properties of p-type Bi_(0.5)Sb_(1.5)Te_3 Bulk Alloys

SHEN Jun-Jie,ZHU Tie-Jun,YU Cui,YANG Sheng-Hui,ZHAO Xin-Bing

IF: 1.292

2010-01-01

Journal of Inorganic Materials

Abstract:(Ag2Te)x(Bi0.5Sb1.5Te3)1-x(x=0,0.025,0.05,0.1) alloys were synthesized by "Melting-Ball Milling-Spark Plasma Sintering" method.Transport properties measurements indicate that the Ag2Te-doping can affect the temperature dependence of thermoelectric properties of the samples significantly.Samples with Ag2Te-doping have better thermoelectric performances in the temperature range from 450 K to 550 K.Appropriate amount of Ag2Te can enhance the phonon scattering of the alloys effectively,which lead to the lower thermal conductivities for these samples.Over the entire temperature range,sample(Ag2Te)0.05(Bi0.5Sb1.5Te3)0.95 exhibits the lowest lattice thermal conductivities,ranging within 0.2-0.3 W/(m·K) from room temperature to 575 K.The maximum ZT value of 0.84 is obtained at 575 K for the sample(Ag2Te)0.05(Bi0.5Sb1.5Te3)0.95.Compared with the one without doping,the ZT value is increased by almost 20%.
Transport properties of indium-alloyed and indium telluride nanostructured bismuth telluride

Hyun-Sik Kim,Nicholas A. Heinz,Zachary M. Gibbs,Junsu Kim,G. Jeffrey Snyder

DOI: https://doi.org/10.1039/d4cp01296h

IF: 3.3

2024-06-20

Physical Chemistry Chemical Physics

Abstract:Nanostructured thermoelectric materials ideally reduce lattice thermal conductivity without harming the electrical properties. Thus, to truly improve the thermoelectric performance, the quality factor, which is proportional to the weighted mobility divided by the lattice thermal conductivity of the material, must be improved. Precipitates of In 2 Te 3 form in the state-of-the-art Bi 2 Te 3 with crystallographic alignment to the Bi 2 Te 3 structure. Like epitaxy in films, this can be called endotaxy in solids. This natural epitaxy in a 3-dimensional solid is ideally situated to scatter phonons but produces minimal electronic scattering and, therefore, maintains high mobility. Here, we study the effects of In-alloying in Bi 2 Te 3 at high In concentrations (about 4 at%), enough to produce the endotaxial microstructure. It is found that such concentrations of indium in Bi 2 Te 3 significantly alter the electronic structure, reducing the effective mass and weighted mobility so significantly as to effectively destroy the thermoelectric properties even though the lattice thermal conductivity is successfully reduced.

chemistry, physical,physics, atomic, molecular & chemical
Synergistic Improvement of BiI3 and In on Thermoelectric Properties of Zone-Melted n-Type Bi2Te2.7Se0.3

Tongliang Wang,Chuandong Zhou,Wenjie Huang,Xueqing Xia,Hanlin Chen,Zhonghua Li,Jun Jiang

DOI: https://doi.org/10.1021/acsami.4c04191

2024-08-07

Abstract:Bismuth telluride (Bi2Te3) is the only commercial thermoelectric material so far, and it is also the best thermoelectric material with the best performance at room temperature. However, up to now, the zT value of n-type materials used on a large scale is only about 1.0; this makes the thermoelectric conversion efficiency of thermoelectric devices and thermoelectric applications stagnant. Therefore, under the synergistic action of BiI3 and In, the properties of n-type Bi2Te2.7Se0.3 material are improved. The experiments show that BiI3, which is nontoxic and non-absorbent, can effectively improve the power factor of the material and inhibit the bipolar effect and is an effective dopant. After the inclusion of In, due to the low bond energy of the In-Te bond, it is easy to form the InTe phase in the matrix material and then introduce the second phase, and the presence of the second phase in the material will scatter phonons and reduce the lattice thermal conductivity so that it can reach 0.31 W m-1 K-1 at 350 K. Ultimately, a high maximum zT of 1.20 at 325 K and a remarkable average zT of 1.04 (300-500 K) are attained in the In0.005Bi1.995Te2.7Se0.3 + 0.13 wt % BiI3 sample.
Effect of Co-Doping on Thermoelectric Properties of n-Type Bi2Te3 Nanostructures Fabricated Using a Low-Temperature Sol-Gel Method

Syed Irfan,Muhammad Aizaz Ud Din,Muhammad Qaisar Manzoor,Deliang Chen

DOI: https://doi.org/10.3390/nano11102719

IF: 5.3

2021-10-15

Nanomaterials

Abstract:In this work, a novel low-temperature double solvent sol-gel method was used to fabricate (Sm, Ce, Gd) and (Sn, Se, I) co-doped at Bi and Te-sites, respectively, for Bi2Te3 nanostructures. The phase-purity and high crystallinity of as-synthesized nanostructures were confirmed using X-ray diffraction and high-resolution transmission electron microscopy. The nanopowders were hot-pressed by spark plasma sintering into bulk pellets for thermoelectric properties. The spark plasma sintering temperature significantly affects the Seebeck coefficient and electrical conductivity of bulk Bi2Te3 pellets. The electrical conductivities of co-doped samples decrease with an increase in the temperature, but conversely, the Seebeck coefficient is linearly increasing. The power factor showed that the co-dopants enhanced the thermoelectric properties of Bi2Te3 nanopowders.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Realizing High Thermoelectric Performance and Thermal Stability in CuInTe2 Through Heavy Dose Mg Doping

Qihong Xiong,Hong Wu,Kaiqi Zhang,Guiwen Wang,Sikang Zheng,Yajie Feng,Shuai Wu,Bin Zhang,Guang Han,Guoyu Wang,Xiaoyuan Zhou,Xu Lu

DOI: https://doi.org/10.1016/j.actamat.2024.120268

IF: 9.4

2024-01-01

Acta Materialia

Abstract:Cu based ternary compounds have received intensive attentions as thermoelectric materials but their carrier mobility and thermal stability are subject to native Cu vacancy. In this work, the synergistic improvement in thermoelectric performance and stability in CuInTe2 is presented, facilitated by local chemical bond enhancement. Heavy dose Mg doping on In site can successfully suppress the formation of Cu vacancy in CuInTe2 and its thermal stability is significantly improved. As a result, In comparison to alternative dopants, Mg doping demonstrates a notable capacity for reinforcing the lattice structure through the inhibition of copper vacancies, thereby yielding a considerable enhancement in mobility by 20 %similar to 50 %, and the zT value of CuIn0.94Mg0.06Te2 exceeds 1.2 at 873 K. By further alloying with Ga on In site, the thermal conductivity is greatly reduced and more surprisingly the thermal stability is continuously enhanced. Notably, in Cu(In0.4Ga0.6)(0.94)Mg0.06Te2, a peak zT value of 1.72 at 973 K is achieved, while in Cu(In0.6Ga0.4)(0.94)Mg0.06Te2, an average zT value of 0.82 is attained. This study offers valuable insights into optimizing the thermoelectric performance and thermal stability of Cu-based ternary compounds through effective doping and defect regulation, providing guidance for future research in this field.
Modulating the valence of In on the thermoelectric properties of Pb0.99In0.01Te1-xSx compounds

Qin Hu,Keke Liu,Jinsong Wu,Xianli Su,Qingjie Zhang,Xinfeng Tang

DOI: https://doi.org/10.1016/j.mtphys.2023.101097

IF: 11.021

2023-06-01

Materials Today Physics

Abstract:In dopant demonstrates a distinct role in PbTe and PbS compounds though they possess the same crystal structure. Therefore, to unravel how the thermoelectric performance evolves in the In-doped PbTe1-xSx solid solution is crucial. Herein, a series of Pb0.99In0.01Te1-xSx samples were synthesized by conventional melting methods. It is found that doping In in PbTe introduces a shallow level impurity state In3+ and a deep level associated with the In+ state simultaneously. Alloying PbS in Pb0.99In0.01Te1-xSx compounds modulates the valence of In dopant, increasing the relative ratio of In3+ content due to the stronger oxidation capacity of S in comparison with that of Te. This augments the room temperature carrier concentration from 3.03 × 1018 cm−3 for Pb0.99In0.01Te compound to 5.76 × 1018 cm−3 for Pb0.99In0.01Te0.91S0.09 compound. Therefore, an improved power factor of 17.4 μW cm−1 K−2 for Pb0.99In0.01Te0.91S0.09 compound is obtained at room temperature. Additionally, alloying PbS in Pb0.99In0.01Te1-xSx compounds enhances the point defect phonon scattering and lowers the lattice thermal conductivity from 1.83 W m−1 K−1 for Pb0.99In0.01Te compound to 0.74 W m−1 K−1 for Pb0.99In0.01Te0.88S0.12 compound at room temperature. As a consequence, a maximum ZT value of 1.12 at 723 K is attained for Pb0.99In0.01Te0.95S0.05 compound, which is improved by 19% in comparison with that of Pb0.99In0.01Te compound. This work provides a new path for modulating the doping behavior of cation site dopant via alloying on anion site to further improve the ZT value in thermoelectric materials.

materials science, multidisciplinary,physics, applied
Band convergence and thermoelectric performance enhancement of InSb via Bi doping

Xiong Zhang,Wei Lu,Yu Zhang,Haoshuang Gu,Zizhen Zhou,Guang Han,Bin Zhang,Guoyu Wang,Xiaoyuan Zhou

DOI: https://doi.org/10.1016/j.intermet.2021.107347

IF: 4.075

2021-12-01

Intermetallics

Abstract:The thermoelectric performance of InSb has been significantly improved via defect engineering or nanostructuring to reduce thermal conductivity in the past decade; however, less attention has been paid to improve its electrical properties via other key factors, e.g., carrier scattering mechanism, bipolar effect, etc. Here, we show that Bi doping on the Sb site not only significantly suppresses the high-temperature bipolar effect, but also leads to band convergence which enhances the Seebeck coefficient. As a result, a maximum zT of ∼0.43 @ 675 K is achieved in InSb0.97Bi0.03, which is increased by ∼43% as compared to that of pure InSb. In addition, the comparison of Bi and Ga doping (J. Mater. Chem., 2011, 21, 12398–12401) on the low-temperature electrical transport properties reveals that Bi doping is more beneficial for achieving high power factor due to the mixed acoustic phonon and ionized impurity scattering. Finally, it is suggested that Bi should be an effective dopant for electrical optimization of InSb and a further experiment on co-doping of Ga and Bi will be a considerable alternative for thermoelectric performance enhancement of InSb-based materials.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Enhancing Near-Room-Temperature GeTe Thermoelectrics through In/Pb Co-doping

Juan Li,Qing Hu,Shan He,Xiaobo Tan,Qian Deng,Yan Zhong,Fujie Zhang,Ran Ang

DOI: https://doi.org/10.1021/acsami.1c11599

2021-07-28

Abstract:The traditional thermoelectric material GeTe has drawn much attention recently because of the reported high thermoelectric performance of the rhombohedral phase in low-temperature ranges, where the split L and Σ band can be reconverged to have a small energy offset and thus high density of state effective mass according to the rhombohedral angle. In addition, In doping in GeTe is also reported to enhance the density of effective mass and therefore increase the Seebeck coefficient because of the induced resonant levels. In this work, In and Pb are doped in GeTe, and In doping leads to an increase in the rhombohedral angle and thus enhanced density of state effective mass in addition to the resonant effect. However, the improved Seebeck coefficient result from In doping is compensated for by a sharp reduction of Hall mobility, leading to no significant enhancement of electronic performance in the rhombohedral phase. By further Pb/Ge doping in the matrix Ge0.95In0.05Te for the optimization of carrier concentration and reduction of lattice thermal conductivity (as low as 0.7 W/mK), a zT as high as ∼1.2 at 550 K and average zT of ∼0.75 between 300 and 550 K are realized in this work, demonstrating GeTe as a promising candidate for near-room-temperature application.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c11599.Temperature-dependent Hall mobility, thermoelectric properties of Ge1–xInxTe, temperature-dependent heat flow, XRD patterns and thermoelectric properties of Pb0.1Ge0.9–xInxTe, and Debye–Callaway model (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Simultaneous Regulation of Electrical and Thermal Transport Properties of N-Type Bi2Te3 Via Adding Excessive Te Followed by Se Doping

Yuxin Sun,Haixu Qin,Wei Wang,Fengkai Guo,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.1021/acsaem.1c00546

IF: 6.4

2021-01-01

ACS Applied Energy Materials

Abstract:Thermoelectric devices based on bismuth telluride-based alloys have been applied widely for several decades. Our results demonstrate that excessive Te constructs large amounts of anti-site defects Te-Bi, thereby increasing the carrier concentration and suppressing the bipolar effect. Moreover, compared with the traditional dominated defects V-Te in other works, the Te-Bi induce smaller lattice distortion, thus alleviating carrier scattering and then increasing carrier mobility. Accordingly, a high ZT value of 0.78 at 125 degrees C is obtained in Bi2Te3 + 0.3 wt % Te. Then, Se doping at Te sites is used to reduce the lattice thermal conductivity by enhancing phonon scattering. Finally, a high ZT value of similar to 1.0 at 125 degrees C and an average ZT value of 0.88 from 30 to 250 degrees C are realized on the Bi2Te2.5Se0.5 + 0.3 wt % Te sample.
Double Effects of High Pressure and Sb Doping Content on Thermoelectric Properties of Bi2Te3-based Alloys

Xin Guo,Xiaopeng Jia,Taichao Su,Kaikai Jie,Hairui Sun,Hongan Ma

DOI: https://doi.org/10.1016/j.cplett.2012.09.001

IF: 2.719

2012-01-01

Chemical Physics Letters

Abstract:The purpose of this research is to study the influences of high pressure and Sb doping content on thermoelectric properties of Bi2−xSbxTe3 alloys. Both variables can adjust the carrier concentration of the system to be more suitable for improving thermoelectric properties. In this Letter, Bi2−xSbxTe3 is synthesized by high pressure and high temperature (HPHT). The carrier concentration for the excellent power factor of synthesized Bi2−xSbxTe3 appears in a carrier concentration range. Therefore, we further analyze and present an optimal carrier concentration range, which is favorable for improving thermoelectric properties of Bi2−xSbxTe3 alloys.
Enhancing Thermoelectric Performance of CuInTe2 via Trace Ag Doping at Indium Sites

Erkuo Yang,Quanwei Jiang,Guangshu Li,Zhen Tian,Jianbo Li,Huijun Kang,Zongning Chen,Enyu Guo,Jun Wang,Tongmin Wang

DOI: https://doi.org/10.1021/acsami.3c11825

2023-10-25

Abstract:Thermoelectric technology can be utilized to directly convert waste heat into electricity, aiming at energy harvesting in an environmentally friendly manner. As a promising p-type thermoelectric material, CuInTe2 possesses a high inherent lattice thermal conductivity, which limits the practical implementation in the field of thermoelectricity. Herein, through the combination of vacuum melting and annealing along with hot-pressure sintering techniques, we demonstrated that CuIn0.95Ag0.05Te2 thermoelectric materials with trace Ag doping can exhibit a notably high Seebeck coefficient of 614 μV/K, arising from the high density-of-states effective mass and reduced carrier concentration. Owing to the diminished lattice thermal conductivity derived from Umklapp scattering induced by point defects and dislocation, stemming from the trace Ag doping at In sites rather than Cu sites, CuIn0.95Ag0.05Te2 exhibited a maximum figure of merit (ZT) of 1.38 at 823 K, an 18% enhancement over pristine CuInTe2, leading to a maximum average ZT of 0.67 across temperatures ranging from 303 to 823 K. In essence, our work underscores the efficacy of doping engineering and point defects in tailoring the thermoelectric performance of CuInTe2-based materials. This study not only contributes to advancing the fundamental understanding of thermoelectric enhancement but also lays out a practical pathway toward the realization of high-performance CuInTe2-based thermoelectric materials.
Anisotropic layered Bi2Te3-In2Te3 composites: control of interface density for tuning of thermoelectric properties

Dongmei Liu,Xinzhong Li,Pedro Miguel de Castro Borlido,Silvana Botti,Roland Schmechel,Markus Rettenmayr

DOI: https://doi.org/10.1038/srep43611

IF: 4.6

2017-03-08

Scientific Reports

Abstract:Layered (Bi1−xInx)2Te3-In2Te3 (x = 0.075) composites of pronounced anisotropy in structure and thermoelectric properties were produced by zone melting and subsequent coherent precipitation of In2Te3 from a (Bi1−xInx)2Te3 (x > 0.075) matrix. Employing solid state phase transformation, the Bi2Te3/In2Te3 interface density was tuned by modifying the driving force for In2Te3 precipitation. The structure-property relationship in this strongly anisotropic material is characterized thoroughly and systematically for the first time. Unexpectedly, with increasing Bi2Te3/In2Te3 interface density, an increase in electrical conductivity and a decrease in the absolute Seebeck coefficient were found. This is likely to be due to electron accumulation layers at the Bi2Te3/In2Te3 interfaces and the interplay of bipolar transport in Bi2Te3. Significantly improved thermoelectric properties of Bi2Te3-In2Te3 composites as compared to the single phase (Bi1−xInx)2Te3 solid solution are obtained.

multidisciplinary sciences
Microstructure and Thermoelectric Properties of Bi0.5Na0.02Sb1.48-xInxTe3alloys Fabricated by Vacuum Melting and Hot Pressing

Xing-Kai,Bei Feng,Kong-Gang,Jiacan Su,Da-Hu,Tiancai Ma,Wang-Nian,Haining Zhang,Yuezhen,Jiang,Shu-Chao,Xuhan Guo

2015-01-01

Abstract:The Bi0.5Na0.02Sb1.48-xInxTe3alloys（x =0.02-0.20） were synthesized by vacuum melting and hot pressing methods at 753 K,60 MPa for 30 min.Effects of Na and In dual partial substitutions for Sb on the thermoelectric properties were investigated from 300 to 500 K.Substituting Sb with Na and In can enhance the Seebeck coefficient effectively near room temperature.The electrical resistivity of the Na and In dual-doping samples is higher within the whole test temperature range.The Bi0.5Na0.02Sb1.48-xInxTe3samples（x = 0.02,0.06） play a great role in optimizing the thermal conductivity.As for the Bi0.5Na0.02Sb1.46In0.02Te3alloy,the minimum value of thermal conductivity reaches 0.53 W·m-1·K-1at 320 K.The thermoelectric performance of the Na and In dualdoped samples is greatly improved,and a figure of merit ZT of 1.26 is achieved at 300 K for the Bi0.5Na0.02Sb1.42In0.06Te3,representing 26%enhancement with respect to ZT = 1.0 of the undoped sample.
Tuning band structure and texture for improved thermoelectric performance in BiSe

Maolin Rao,Peihui Chen,Wenjun Wang,Zimin He,Shiyu Wang,Xiaofang Lai,Fusheng Liu,Jikang Jian

DOI: https://doi.org/10.1016/j.jallcom.2023.170482

IF: 6.2

2023-05-15

Journal of Alloys and Compounds

Abstract:Layer-structured BiSe has emerged as a promising Te-free thermoelectric (TE) material because of its intrinsic low thermal conductivity. Herein we report the optimization of TE performance for BiSe through In doping to tune the band structure and the proper annealing treatment to adjust the texture. The first-principles calculations and doping experiments reveal that In dopant in BiSe introduces additional energy levels near Fermi level leading to the increase of carrier effective mass. The preferred orientation of (00 l ) plane in BiSe was well adjusted to optimize the electrical conductivity and Seebeck coefficient. Through tuning band structure and texture simultaneously, the Bi 0.995 In 0.005 Se sample exhibited a maximum figure of merit ZT value of 0.33 at 523 K, which is about 43.5 % higher than that of the pristine BiSe sample without the texture adjustment. This work presents a potential route to promote the TE performance of layer-structured materials.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Band Structure Manipulated by High Pressure-Assisted Te Doping Realizing Improvement in Thermoelectric Performance of BiCuSeO System

Zhongyuan Liu,Xin Guo,Rui Li,Jieming Qin,Hongjun Li,Xin Chen,Xiaoyuan Zhou

DOI: https://doi.org/10.1016/j.jmat.2019.06.002

IF: 8.589

2019-01-01

Journal of Materiomics

Abstract:Band structure engineering is an effective strategy for the improvement in thermoelectric performance, especially in electrical transport properties. In this work, high pressure is employed to assist Te doping to rapidly realize modulation of band structure in BiCuSe1-xTexO, and then achieving a superhigh carrier mobility of 129.6 cm(2)V(-1) s(-1) due to significant reduction in the effective mass. The experimental observations have been verified by density functional theory (DFT) simulation. Meanwhile, the implementing of high pressure during synthesis process extends the optimization effect of Te doping on carrier-phonon transport of BiCuSeO system. The multiscale microstructures induced by synergistic effect of high pressure and Te content markedly modulate the scattering mechanisms of carriers and phonons, yielding an ultralow thermal conductivity of 0.3 W m(-1) K-1 at 873 K and a moderate effect on low-energy carriers. Ultimately, a maximum zT of 0.86 at 873 K is achieved for BiCuSe0.8Te0.2O, similar to 21% improvement in comparison with the previous reported value for state-of-the-art BiCuSe1-xTexO samples. This study provides a revelation for employing high pressure to manipulate band structure, promoting the effect of heteroatoms doping on the improvement in thermoelectric performance of the BiCuSeO or other systems. (C) 2019 The Chinese Ceramic Society. Production and hosting by Elsevier B.V.
Influence of Ag2te Doping on the Thermoelectric Properties of P-Type Bi0.5sb1.5te3 Bulk Alloys

Shen Jun-Jie,Zhu Tie-Jun,Yu Cui,Yang Sheng-Hui,Zhao Xin-Bing

DOI: https://doi.org/10.3724/sp.j.1077.2010.00583

IF: 1.292

2010-01-01

Journal of Inorganic Materials

Abstract:(Ag2Te)(x)(Bi0.5Sb1.5Te3)(1-x)(x=0, 0.025, 0.05, 0.1) alloys were synthesized by "Melting-Ball Milling-Spark Plasma Sintering" method. Transport properties measurements indicate that the Ag2Te-doping can affect the temperature dependence of thermoelectric properties of the samples significantly. Samples with Ag2Te-doping have better thermoelectric performances in the temperature range from 450 K to 550 K. Appropriate amount of Ag2Te can enhance the phonon scattering of the alloys effectively, which lead to the lower thermal conductivities for these samples. Over the entire temperature range, sample (Ag2Te)(0.05)(Bi0.5Sb1.5Te3)(0.95) exhibits the lowest lattice thermal conductivities, ranging within 0.2-0.3 W/(m.K) from room temperature to 575 K. The maximum ZT value of 0.84 is obtained at 575 K for the sample (Ag2Te)(0.05)(Bi0.5Sb1.5Te3)(0.95). Compared with the one without doping, the ZT value is increased by almost 20%.
Understanding the Influence of Bi/Sb Substitution on Carrier Concentration in Mg3Sb2-based Materials: Decreasing Bandgap Enhances the Degree of Impurity Ionization

Juan Li,Fei Jia,Kai Han,Bing Sun,Lianzhen Cao,Yingde Li,Shuai Zhang

DOI: https://doi.org/10.1039/d2cp04314a

2022-01-01

Abstract:Experimental results show an intriguing phenomenon that although Bi and Sb have the same number of valence electrons, Bi/Sb substitution increases the electron concentration of n-type Mg3Sb2-based materials. Using a combination of theoretical calculations and experimental synthesis, this work reveals the physical mechanism of the effect of Bi doping on carrier concentration. The increase in electron concentration mainly originates from the enhanced degree of ionization of donor impurity because of the decrease of conductivity effective mass and increase of dielectric constant caused by the narrowing of bandgap with Bi doping. Based on the collaborative optimization of the electrical and thermal transports, n-type Mg3.175Mn0.025Sb1.48Bi0.48Te0.04 exhibits the best thermoelectric performance with a peak zT of 1.85 at 725 K and an average zT of 1.21. This work demonstrates an effective strategy of bandgap engineering for the optimization of carrier concentration and provides insightful guidance for designing other thermoelectric materials.
Enhancement in thermoelectric performance of bismuth telluride based alloys by multi-scale microstructural effects

T. Zhu,Xiao-hua Liu,Lipeng Hu,Junjie Shen,Hongli Gao,Xinbing Zhao,Hanhui Xie

DOI: https://doi.org/10.1039/C2JM32916F

2012-07-24

Abstract:Decoupling of interdependent thermoelectric parameters was considered as a crucial strategy to enhance the thermoelectric performance of bulk materials. Here multi-scale microstructural effects have been introduced by a simple hot deformation process to obtain high-performance n-type bismuth telluride based alloys. Highly preferred orientation enables a significant improvement in in-plane electrical conductivity. The donor-like effect (an interaction of antisite defects and vacancies), which can be adjusted by varying hot deformation temperature, was also considered responsible for the remarkable enhancement in power factor. Besides, the in-plane lattice thermal conductivity was greatly reduced by in situ nanostructures and high-density lattice defects generated during the hot deformation process. The present study experimentally demonstrates a successful combination of microscale texture enhancement, atomic scale lattice defects and donor-like effect and recrystallization induced nanostructures as a new approach to improve thermoelectric properties. These effects led to a maximum ZT of 0.95 for the Bi2Te2Se1 sample hot deformed at 823 K, about 80% improvement over that without hot deformation.

Engineering,Materials Science,Physics

Effect of Doping Indium into a Bi2Te3 Matrix on the Microstructure and Thermoelectric Transport Properties

In-doping induced resonant level and thermoelectric performance enhancement in n-type GeBi 2 Te 4 single crystals with intrinsically low lattice thermal conductivity

Origin of the High Performance in GeTe-Based Thermoelectric Materials Upon Bi2Te3 Doping

Influence of Ag_2Te Doping on the Thermoelectric Properties of p-type Bi_(0.5)Sb_(1.5)Te_3 Bulk Alloys

Transport properties of indium-alloyed and indium telluride nanostructured bismuth telluride

Synergistic Improvement of BiI3 and In on Thermoelectric Properties of Zone-Melted n-Type Bi2Te2.7Se0.3

Effect of Co-Doping on Thermoelectric Properties of n-Type Bi2Te3 Nanostructures Fabricated Using a Low-Temperature Sol-Gel Method

Realizing High Thermoelectric Performance and Thermal Stability in CuInTe2 Through Heavy Dose Mg Doping

Modulating the valence of In on the thermoelectric properties of Pb0.99In0.01Te1-xSx compounds

Band convergence and thermoelectric performance enhancement of InSb via Bi doping

Enhancing Near-Room-Temperature GeTe Thermoelectrics through In/Pb Co-doping

Simultaneous Regulation of Electrical and Thermal Transport Properties of N-Type Bi2Te3 Via Adding Excessive Te Followed by Se Doping

Double Effects of High Pressure and Sb Doping Content on Thermoelectric Properties of Bi2Te3-based Alloys

Enhancing Thermoelectric Performance of CuInTe2 via Trace Ag Doping at Indium Sites

Anisotropic layered Bi2Te3-In2Te3 composites: control of interface density for tuning of thermoelectric properties

Microstructure and Thermoelectric Properties of Bi0.5Na0.02Sb1.48-xInxTe3alloys Fabricated by Vacuum Melting and Hot Pressing

Tuning band structure and texture for improved thermoelectric performance in BiSe

Band Structure Manipulated by High Pressure-Assisted Te Doping Realizing Improvement in Thermoelectric Performance of BiCuSeO System

Influence of Ag2te Doping on the Thermoelectric Properties of P-Type Bi0.5sb1.5te3 Bulk Alloys

Understanding the Influence of Bi/Sb Substitution on Carrier Concentration in Mg3Sb2-based Materials: Decreasing Bandgap Enhances the Degree of Impurity Ionization

Enhancement in thermoelectric performance of bismuth telluride based alloys by multi-scale microstructural effects