A Bandgap Reference with Temperature Compensation and Improved PSRR

HE Jie,ZHU Zhen,WANG Tao,LI Men-xiong,HONG Zhi-liang

DOI: https://doi.org/10.3969/j.issn.0427-7104.2001.01.016

2001-01-01

Abstract:A bandgap reference is presented. It can work in input voltage of 3.3 V with 0.3 5 μm N-well CMOS technology. Simulation with Spectres and HSpice shows that th is bandgap reference can operate with temperature coefficient 6×10-6/K an d PSRR 2.2 mV/V.

What problem does this paper attempt to address?

Design and Realization of a High Precision Low Temperature Coefficient Bandgap Voltage Reference

Yuan Ting,Gong Wen-chao,He Le-nian

2009-01-01

Abstract:This paper demonstrates a design of bandgap voltage reference with high precision and low temperature coefficient.A dual-differential input operational amplifier is used for high-temperature coefficient compensation.The chip is simulated by using Cadence's Spectre software and implemented by using TSMC 0.35 μm mixed-signal process.Simulation results indicate that the bandgap voltage reference has a temperature coefficient of 2.2 ppm/℃ in-40～125 ℃.
A Low Drift Curvature-Compensated Bandgap Reference with Trimming Resistive Circuit

Zhi-hua Ning,Le-nian He

DOI: https://doi.org/10.1631/jzus.c1000440

2011-01-01

Journal of Zhejiang University SCIENCE C

Abstract:A low temperature drift curvature-compensated complementary metal oxide semiconductor (CMOS) bandgap reference is proposed. A dual-differential-pair amplifier was employed to add compensation with a high-order term of TlnT (T is the thermodynamic temperature) to the traditional 1st-order compensated bandgap. To reduce the offset of the amplifier and noise of the bandgap reference, input differential metal oxide semiconductor field-effect transistors (MOSFETs) of large size were used in the amplifier and to keep a low quiescent current, these MOSFETs all work in weak inversion. The voltage reference’s temperature curvature has been further corrected by trimming a switched resistor network. The circuit delivers an output voltage of 3 V with a low dropout regulator (LDO). The chip was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC)’s 0.35-μm CMOS process, and the temperature coefficient (TC) was measured to be only 2.1×10−6/°C over the temperature range of −40–125 °C after trimming. The power supply rejection (PSR) was −100 dB @ DC and the noise was 42 μV (rms) from 0.1 to 10 Hz.
A High Precision Circuit of Bandgap Voltage Reference

Haoliang LI,Lenian HE,Xiaolang YAN

DOI: https://doi.org/10.3969/j.issn.1000-3819.2005.01.016

2005-01-01

Abstract:Based upon analysis of several types of bandgap voltage reference circuit, we demonstrate a high precision circuit of bandgap voltage reference with relatively simple structure for high-speed serial link. With an improved structure of two-stage high-gain operational amplifier, the simulation results show that the error in worst case is 0.057% over the temperature range of -50°C-70°C. Test circuits have been fabricated in TSMC 0.25 μ m CMOS mixed-signal model process. Experimental results yield an output voltage 1.2337-1.2356 V which is constant within 0.154% over the temperature range of -50°C-70° C with power supply of 2.5 V, and average error of 0.016% between simulation and experimental results. The chip area of bandgap voltage reference circuit is 158 μm× 164 μm.
Super Performance CMOS Band-Gap Voltage Reference

ZHU Ying,HE Le-nian,YAN Xiao-lang

DOI: https://doi.org/10.3969/j.issn.1671-7147.2007.02.014

2007-01-01

Abstract:This paper proposes a new type of band-gap voltage reference.A cascode current mirror is used to produce bias currents and hence PMOS channel length modulation errors are reduced.Supply noise is suppressed by adding a simple voltage subtractor circuit.Simulation using Hspice is based on the CSMC 0.6um CMOS process.The results show the temperature coefficient is 2.93×105 ℃ between the temperature range of-50 ℃ to +100 ℃ and the PSR is the-84.2 dB.The band-gap output voltage is within 2.5±0.0012 V when the supply voltage is between 3.5 V and 6.5 V.Therefore,it is an effective way to implement a band-gap voltage reference.
A bandgap reference circuit with nominal value adjustable

Chen Chen,Lenian He

DOI: https://doi.org/10.1109/ICASIC.2007.4415681

2007-01-01

Abstract:This paper presents a bandgap reference circuit, which provides a temperature-independent reference voltage with the nominal value adjustable. The design of the adjustable bandgap reference circuit is based on the method of dividing the voltage of VBE. The chip is implemented in the CSMC mixed-signal 0.5 um CMOS process. The experimental results verified that the nominal value can be adjusted as expected.
A 2.2ppm/°c Compensated Bandgap Voltage Reference with a Double-Ended Current Trimming Technique.

Wenxin Yu,Lenian He,Jianxiong Xi,Quan Sun,Changyou Men

DOI: https://doi.org/10.1587/elex.19.20220390

2022-01-01

IEICE Electronics Express

Abstract:This paper presents a high-precision bandgap voltage reference (BGR) with a double-ended current trimming technique. A high-order curvature compensation method is adopted to compensate for the nonlinearity of VBE. The proposed trimming technique using the one-time programmable (OTP) programming cancels the errors caused by process variation and enables bulk production, which achieves a best TC of 2.2 ppm/degrees C from -40 degrees C to 125 degrees C. The proposed BGR is fabricated in a 0.18-um BCD process with an active area of 0.329 mm2. The line sensitivity is 0.18 %/V operating from 2.9 V to 3.6 V.
A Novel High PSR Voltage Reference with Secondary Temperature Compensation

Zhi-Hua Ning,Le-Nian He,Yi Wang,Ya-Li Shao

DOI: https://doi.org/10.1109/icece.2010.781

2010-01-01

Abstract:A novel voltage reference based on Kujik [1] bandgap is proposed in this paper. An extra amplifier and bipolar are used to produce a current of positive temperature coefficient, which is for compensating the Kujik bandgap reference in high temperature. The reference finally has a temperature coefficient of only 10 ppm/_. A negative feedback loop is introduced to provide a pre-regulated power supply for the voltage reference, which has increased the power supply rejection (PSR) of the voltage reference to -120 dB@dc. The circuit has been designed with TSMC 0.35 μm CMOS process, and the measurements agree our design.
A current reference based on bandgap technology with wide input voltage range by using 0.18µm BCD process

Kan Liu,Yadan Shen,Yidie Ye,Lenian He

DOI: https://doi.org/10.1109/EDSSC.2012.6482889

2012-01-01

Abstract:A current reference with 8~25V input voltage range has been designed by using CSMC's 0.18μm BCD process. Based on the bandgap technology, the temperature coefficient of the current reference was obtained to be 105.9~110.7 ppm/°C over the temperature range of -40~125°C when the input voltage was 8~25V. The total quiescent current of the current reference is 9.02μA and 22.55μA when the input voltage is 8V and 25V, respectively. Moreover, the PSR (power supply rejection) at low frequency is -56.2dB ~ -28.1dB, when the input voltage is between 8V and 25V. This current reference has been successfully applied in a white LED driver chip.
A Bandgap Reference with Temperature Compensation and Its Output Buffer

Jie HE,Zhen ZHU,Tao WANG,Meng-xiong LI,Zhi-liang HONG

DOI: https://doi.org/10.3969/j.issn.1004-3365.2001.02.009

2001-01-01

Abstract:A bandgap reference is fabricated with 0.35 μm n-well CMOS technology. Operating at an input voltage of 3. 3 V, the bandgap reference has a temperature coefficient of 8 ppm/℃ and a power supply rejection ratio (PSRR) of 4 mV/V in simulation with Spectres and HSpice. At the same time, a buffer suitable for reference output is also presented which can achieve a slew rate of about 112 V/μs. This buffer is used to regain the stability of output voltage as fast as possible after load changes.
A 0.9-V high-PSRR bandgap with self-cascode current mirror

Tianlin Cao,Yan Han,Xiaopeng Liu,Hao Luo,Lu Liao,Hao Zhang

DOI: https://doi.org/10.1109/ICCircuitsAndSystems.2012.6408273

2012-01-01

Circuits and Systems

Abstract:A 0.9-V supply voltage, high power supply rejection ratio (high-PSRR) bandgap reference with high-order compensation is presented. By inserting a group of self-cascode current mirrors and adopting an effective technique of high-order compensation, this bandgap reference is designed in 0.18 μm CMOS process. Simulation has been carried out and the results prove that the PSRR and temperature coefficient (TC) are both improved evidently in low voltage. Under 0.9 V supply voltage, the bandgap reference's PSRR is -86 dB at 1 kHz and -25 dB at 1 MHz, its TC is 0.096 ppm/°C from -40 °C to +85 °C, consuming a total current of 86.6 μA.
A 1.2 V,9 Ppm/℃ CMOS Bandgap Voltage Reference

ZHONG Changxian,ZHANG Bo,ZHOU Hao,LU Yang

DOI: https://doi.org/10.3969/j.issn.1004-373x.2006.16.043

2006-01-01

Abstract:Based on the analysis of conventional CMOS bandgap voltage reference,by combining the curvature compensation technique,a lowsupply CMOS bandgap voltage reference circuit,with the use of bulkdriven opamp as the feedback amplifier is proposed.The proposed circuit adopts currentmode structure and is designed in standard 0.5 μm CMOS process.The simulation is carried out under the supply voltage of 1.2 V using Hspice,the result shows that the output reference has a TC of 9 ppm/℃ through the temperature range of-40～120 ℃.
A Low Voltage High Precision CMOS Bandgap Reference

Xinpeng Xing,Zhihua Wang,Dongmei Li

DOI: https://doi.org/10.1109/norchp.2007.4481079

2007-01-01

Abstract:In this paper, a low voltage bandgap reference with high precision is presented. Utilizing current mode structure, the minimum voltage of the proposed bandgap circuit can be reduced to 900 mV. Compensated with V-EB linearization technique, this bandgap reference can reach a temperature coefficient of 10 ppm/degrees C in the range from 0 degrees C to 150 V. With 1.1-V supply voltage, the power is 47 uW and the PSRR is -55 dB at DC frequency. Occupying 0.186 mm(2) chip area, this bandgap reference has been verified in UMC 0.18um. mixed mode CMOS Technology.
A Novel Wide Temperature Range Bandgap Reference

Gong Xiaofeng,Liu Minjie,Zhou Bin,Dong Jingxin

DOI: https://doi.org/10.1109/mwscas.2012.6292068

2012-01-01

Abstract:This paper reports a high performance bandgap voltage reference, in which the temperature is distinguished by a simple on chip thermometer. Four similar performance bandgap references operate in different temperature ranges with high preference. Each bandgap reference works with the discussion on the principle of the quadratic temperature compensation. Two resistors made of different materials are used to compensate the quadratic temperature, and hence to efficiently reduce the temperature drift of the bandgap voltage reference. To decrease the offset voltage, the improved design methods for circuit and layout are introduced. The cascode structure is also introduced in this bandgap voltage reference circuit to improve the power supply rejection ratio (PSRR). Finally the simulation results based on 0.35 μm CMOS process indicate that the temperature coefficient of the proposed reference is 300 ppm during the full temperature range (-65°C~150°C).
A Precise Curvature Compensated CMOS Bandgap Voltage Reference with Sub 1V Supply

Song Ying,Jia Song,Zhao Baoying

DOI: https://doi.org/10.1109/ICSICT.2006.306416

2006-01-01

Abstract:A precise curvature compensated CMOS bandgap voltage reference is presented, which utilizes temperature-independent current and an improved voltage-transfer unit to compensate for the higher order of the VBE. The new proposed bandgap voltage reference is implemented in 0.13 mum CMOS technology and operates with 0.9V supply voltage consuming 48muW at room temperature. The circuit achieves 5ppm/degC of temperature coefficient with temperature range from -40 to 85degC. With 0.9V supply voltage, the power noise rejection ratio is -25 dB at 10 kHz
A 1.2-V 2.18-ppm/°C curvature-compensated CMOS bandgap reference

Yuxin Zhang,Jinghu Li,Xinsheng Wang,Zhicong Luo,Yanfei Zhou

DOI: https://doi.org/10.1587/elex.18.20210162

2021-06-10

IEICE Electronics Express

Abstract:A high-precision and low-temperature-coefficient bandgap voltage reference is proposed in 0.11 µm CMOS process. A temperature piecewise compensation circuit is added to a traditional bandgap reference to decrease the temperature coefficient (TC). The digital trimming technology has been used to solve the deviation of TC and output voltage resulting from process corner and mismatch. Simulation result shows that the bandgap reference achieves TC of 2.18 ppm/°C from -40°C to 125°C. Bandgap reference output voltage is 1.2 V with in the error of ±5 mV.

engineering, electrical & electronic
Design of a High PSRR Low-pressure Bandgap Reference Source with Curvature Compensation

Junchao Liu,Xiaocha Wang

DOI: https://doi.org/10.1088/1742-6596/2625/1/012078

2023-10-01

Journal of Physics: Conference Series

Abstract:Abstract Based on the NUVOTON 0.35 μm BCD process, a low voltage bandgap reference with an input voltage of 5 V and output voltage of 0.6 V is designed in this paper. The traditional low-voltage bandgap reference output voltage has a large temperature coefficient and poor ability to suppress power supply fluctuations. In this paper, a circuit with high order compensation is proposed to reduce the temperature coefficient of the circuit, and a pre-regulated circuit is used to increase the power supply rejection ratio. The simulation results are at -30 °C∼130 °C. The output voltage of reference voltage is 947.5 μV, the temperature coefficient is 9.58 ppm/°C, and the power suppression ratio is -104.62 dB, which meets the design requirements of the power management chip.
Design of Precise and Adjustable CMOS Bandgap Voltage Reference Circuit

HOU Shao-hua,SONG Qiang

DOI: https://doi.org/10.3969/j.issn.1671-1815.2008.09.038

2008-01-01

Abstract:To realize changeable voltage reference circuit and lower its temperature coefficient,a new precise and adjustable CMOS bandgap reference circuit is designed by using CMOS N-well process model of CSMC in 0.6 μm standard CMOS process.On the base of the conventional bandgap reference circuit,this circuit is added an operation amplifier and analyzed to get suitable coefficient.The output reference voltage is adjustable along with the variation of resistor values.The design indicates that the circuit performs well and is not sensitive to the process in the temperature range of-55～125℃.
A Novel High-Precision Bandgap Reference with Differential Common-Gate Structure

Chujun Lin,Hongying Chen,Weidong Xu,Fang Gao,Xin'an Wang

DOI: https://doi.org/10.1109/icasid.2015.7405659

2015-01-01

Abstract:This paper proposes a novel kind of bandgap reference (BGR) with high precision and high power supply rejection ratio (PSRR) by using optimized differential common-gate structure and a cascode amplifier. The circuit uses the standard 0.18 μm CMOS process. The simulation results indicate that the temperature range is -20°C to 80°C and the temperature coefficient (TC) less than 27 ppm/°C is achieved at all process corners. Line regulation is better than 0.045%/V and the power supply rejection ratio in low frequency is close to 56dB. The supply voltage of the proposed bandgap reference ranges from 1.8V to 3.5V while the maximum supply current is 36μA at room temperature.
A 3v 110uw 3.1ppm/Degrees C Curvature-Compensated Cmos Bandgap Reference

Xiaokang Guan,Albert Wang,Akira Ishikawa,Satoru Tamura,Zhihua Wang,Chun Zhang

2006-01-01

Abstract:This paper presents a curvature-compensated bandgap reference (BGR) circuit implemented in 0.35um CMOS technology. The circuit delivers an output voltage of 1.09 V and achieves a temperature coefficient of 3.1 ppm/degrees C over [-20 degrees C, 100 degrees C] after trimming, a power supply rejection ratio of -80 dB at 1KHz and an output noise level of 1.43 uV/sqrt(Hz) at 1KHz. The BGR circuit consumes a current of 37uA and the power supply ranges from 1.5V to 3.3V.
New Curvature-Compensated CMOS Bandgap Voltage Reference

Jiwen Lu,Shen,Ning,Qi,Anchi Yu,Victoria C. Yan,Bin Luo,Chunsheng,Qing Li

2007-01-01

Abstract:A novel curvature-compensated CMOS bandgap voltage reference is presented. The reference utilizes two first order temperature compensations generated from the nonlinearity of the finite current gain β of vertical pnp bipolar transistor. The proposed circuit, designed in a standard 0.18 µm CMOS process, achieves a good temperature coefficient of 2.44 ppm/ ° C with tempera- ture range from −40 ° C to 85 ° C, and about 4 mV supply voltage variation in the range from 1.4 V to 2.4 V. With a 1.8 V supply voltage, the power supply rejection ratio is −56 dB at 10 MHz.

A Bandgap Reference with Temperature Compensation and Improved PSRR

Design and Realization of a High Precision Low Temperature Coefficient Bandgap Voltage Reference

A Low Drift Curvature-Compensated Bandgap Reference with Trimming Resistive Circuit

A High Precision Circuit of Bandgap Voltage Reference

Super Performance CMOS Band-Gap Voltage Reference

A bandgap reference circuit with nominal value adjustable

A 2.2ppm/°c Compensated Bandgap Voltage Reference with a Double-Ended Current Trimming Technique.

A Novel High PSR Voltage Reference with Secondary Temperature Compensation

A current reference based on bandgap technology with wide input voltage range by using 0.18µm BCD process

A Bandgap Reference with Temperature Compensation and Its Output Buffer

A 0.9-V high-PSRR bandgap with self-cascode current mirror

A 1.2 V,9 Ppm/℃ CMOS Bandgap Voltage Reference

A Low Voltage High Precision CMOS Bandgap Reference

A Novel Wide Temperature Range Bandgap Reference

A Precise Curvature Compensated CMOS Bandgap Voltage Reference with Sub 1V Supply

A 1.2-V 2.18-ppm/°C curvature-compensated CMOS bandgap reference

Design of a High PSRR Low-pressure Bandgap Reference Source with Curvature Compensation

Design of Precise and Adjustable CMOS Bandgap Voltage Reference Circuit

A Novel High-Precision Bandgap Reference with Differential Common-Gate Structure

A 3v 110uw 3.1ppm/Degrees C Curvature-Compensated Cmos Bandgap Reference

New Curvature-Compensated CMOS Bandgap Voltage Reference