Abstract:Planar heterojunction perovskite solar cells have emerged as competitive photovoltaic technology, where charge transport materials play a crucial role. Here, we successfully demonstrate a systematic approach to investigate the doping effect on SnO2 electron transport material, based on the introduction of metal chloride with different valance states. A thorough characterization by x-ray diffraction, x-ray photoelectron spectroscopy, space charge limited current, transmittance, time-resolved photoluminescence and electrochemical impedance spectroscopy measurements was performed to gain an understanding of the SnO2-based materials and devices. It was revealed that proper doping in the electron transport layer can benefit VOC and/or JSC in the devices, due to improved crystallinity, conductivity and transmittance, along with faster interface transfer. Further analysis indicates that certain doping elements are increasingly beneficial to cell performance, which follows the sequence of Li, Mg and Sb. We present here the overall performance improvement from the original efficiency of 15.48% to an elevated one as 17.07% with our Sb-doped SnO2 cell. The enhancement in conductivity also confirms that p-type doping for SnO2 in this case can still be favorable. Furthermore, the entire device was fabricated via a solution process with the processing temperature below 200 °C, suggesting a promising way toward the further development of low-cost perovskite solar cells and commercial manufacturing.

High-performance Cadmium Sulphide-Based Planar Perovskite Solar Cell and the Cadmium Sulphide/perovskite Interfaces

CdS Induced Passivation toward High Efficiency and Stable Planar Perovskite Solar Cells

High Performance Inverted RbCsFAPbI3 Perovskite Solar Cells Based on Interface Engineering and Defects Passivation.

Low-Temperature, Solution Processed Metal Sulfide As An Electron Transport Layer For Efficient Planar Perovskite Solar Cells

High-Performance Simple-Structured Planar Heterojunction Perovskite Solar Cells Achieved by Precursor Optimization.

Interface studies of the planar heterojunction perovskite solar cells

Green Low-Temperature-solution-processed in Situ HI Modified TiO2/SnO2 Bilayer for Efficient and Stable Planar Perovskite Solar Cells Build at Ambient Air Conditions

Efficient Planar Perovskite Solar Cells with Low-Temperature Atomic Layer Deposited TiO2 Electron Transport Layer and Interfacial Modifier

Low Temperature Solution-Derived TiO2-SnO2 Bilayered Electron Transport Layer for High Performance Perovskite Solar Cells

High-performance Planar Heterojunction Perovskite Solar Cells: Preserving Long Charge Carrier Diffusion Lengths and Interfacial Engineering

High-performance inverted planar heterojunction perovskite solar cells based on a solution-processed CuOx hole transport layer.

Boosting the performance of low-temperature processed CsPbI2Br planar perovskite solar cells by interface engineering

Interpenetrating interfaces for efficient perovskite solar cells with high operational stability and mechanical robustness

Cadmium-doped flexible perovskite solar cells with a low-cost and low-temperature-processed CdS electron transport layer

CsPbBr3 Nanocrystal Induced Bilateral Interface Modification for Efficient Planar Perovskite Solar Cells.

Doping Effects in SnO2 Transport Material for High Performance Planar Perovskite Solar Cells

Strengthened Buried Interface via Metal Sulfide Passivation towards High‐Performance CsPbBr3 Perovskite Solar Cells

A low-temperature TiO2/SnO2 electron transport layer for high-performance planar perovskite solar cells

Highly Stable and Enhanced Performance of p–i–n Perovskite Solar Cells via Cuprous Oxide Hole-Transport Layers

Strengthened Buried Interface Via Metal Sulfide Passivation Toward High‐Performance CsPbBr3 Perovskite Solar Cells

Multifunctional Polymer‐Regulated SnO 2 Nanocrystals Enhance Interface Contact for Efficient and Stable Planar Perovskite Solar Cells