Abstract:The charge transport of donor–acceptor (D–A) conjugated polymer along the intramolecular main chain is faster than the intermolecular π–π stacking. The higher the backbone coplanarity is, the more efficient the charge transport is. Here, we proposed a strategy to improve the backbone planarization by increasing the polarization of the A unit along the main chain direction via hydrogen-bonding (H-bonding) interactions. This is enabled by adding ethylene glycol (EG) to poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} [P(NDI2OD-T2)] in chloroform solution, and H-bonding interactions are formed between the H atoms on the hydroxyl groups of EG and O atoms on the NDI2OD units. The relative intensity of the antisymmetric (b) and symmetric (a) C═O stretching normal modes increased from 2.5 without EG to 3.0 with 3% EG (the optimal content) as demonstrated by Fourier transform infrared spectra (FT-IR). In addition, compared to without EG the conformation is transformed from the random coil chains to ordered interchain stacking after adding EG as revealed by cryogenic transmission electron microscopy (cryo-TEM). The fraction of aggregate in solution was increased. The solid-state films obtained by blade coating exhibited anisotropic molecular chain alignment with the orientation parameter (S2D) increasing from 0.55 to 0.95 and noticeable (001) peaks in parallel and (100) peaks in perpendicular to the coating direction, respectively. Furthermore, we fabricated top-gate bottom-contact field-effect transistors, exhibiting average electron mobility has improved nearly 5-fold, from 0.25 cm2 V–1 s–1 without EG to 1.21 cm2 V–1 s–1 with 3% EG. Overall, this study provides an approach for improving the charge transport of D–A semiconducting polymers.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.macromol.1c02329.Details on frozen sample preparation, the dichroic ratio of films at different coating speeds with 0%–4% EG, output characteristic curves of different OFETs devices, electronic characteristics of P(NDI2OD-T2) by spin coating, FT-IR spectra of the P(NDI2OD-T2) films in different content of EG, 1H NMR spectra of P(NDI2OD-T2), EG and P(NDI2OD-T2)/EG, the calculation of the oscillator strength of the disordered and aggregated states, the deconvolution of the P(NDI2OD-T2) solution absorption spectra, the summarized table of average electron mobility of P(NDI2OD-T2), and the results of ∫εdv, n, ΔAaggregate, ΔAdisorder, fdisorder, F and faggregate (PDF)This article has not yet been cited by other publications.

Epitaxially-crystallized oriented naphthalene bis(dicarboximide) morphology for significant performance improvement of electron-transporting thin-film transistors.

High Performance N-Type Single Crystalline Transistors of Naphthalene Bis(dicarboximide) and Their Anisotropic Transport in Crystals

High performance n-channel thin-film field-effect transistors based on angular-shaped naphthalene tetracarboxylic diimides

Effects of P-(Trifluoromethoxy)benzyl and P-(Trifluoromethoxy)phenyl Molecular Architecture on the Performance of Naphthalene Tetracarboxylic Diimide-Based Air-Stable N-Type Semiconductors.

The continuous fiber networks with a balanced bimodal orientation of P(NDI2OD-T2) by controlling solution nucleation and face-on and edge-on crystallization rates

Wafer-Scale Epitaxy of Flexible Nitride Films with Superior Plasmonic and Superconducting Performance

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

n-Type D-A Conjugated Polymers: Relationship Between Microstructure and Electrical/Mechanical Performance

High Mobility n‐Type Imide‐Based Semiconductor with Unusual Single‐Crystal Packing Structure in Solution‐Processed Thin Film

Liquid Crystal-Like Active Layer for High-Performance Organic Field-Effect Transistors

Spin-Coated Crystalline Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors

Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate

Laterally Expanded Rylene Diimides with Uniform Branched Side Chains for Solution-Processed Air Stable N-Channel Thin Film Transistors

Surface-Induced Highly Oriented Perylo[1,12-B,C,D]Selenophene Thin Films for High Performance Organic Field-Effect Transistors

End-Capping π-Conjugated Naphthodithiophene Diimide (NDTI)-Based Triads with Noncovalent Intramolecular S···O Interactions: A Route towards High-Performance Solution-Processable Air-Stable n-Type Semiconductors

Synthesis and Performance of (E)-3-Phenyl-2-(thiophen-2-yl)acrylonitrile-Based Small-Molecule Semiconductors

Increasing the Charge Transport of P(NDI2OD-T2) by Improving the Polarization of the NDI2OD Unit along the Backbone Direction and Preaggregation via H-Bonding

Fluoroalkyl-modified Naphthodithiophene Diimides

Naphthalenediimide-Based Copolymers Incorporating Vinyl-Linkages for High-Performance Ambipolar Field-Effect Transistors and Complementary-Like Inverters under Air

Wafer‐scale Epitaxial Growth of Two‐dimensional Organic Semiconductor Single Crystals Toward High‐performance Transistors

Fluorinated Naphthalene Diimides as Buried Electron Transport Materials Achieve Over 23% Efficient Perovskite Solar Cells