Highly Individual SWCNTs for High Performance Thin Film Electronics

Antti Kaskela,Patrik Laiho,Norihiro Fukaya,Kimmo Mustonen,Toma Susi,Hua Jiang,Nikolay Houbenov,Yutaka Ohno,Esko I. Kauppinen
DOI: https://doi.org/10.1016/j.carbon.2016.02.099
IF: 10.9
2016-01-01
Carbon
Abstract:We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCNT bundling and a substantial increase in SWCNT lengths via the suppression of bundling-induced growth termination. The fabricated uniform TCFs exhibit sheet resistances of 89 Omega/sq. at 90% transmittance. This was further improved by micro-patterning, resulting in a sheet resistance of 69 Omega/sq. at 97% transmittance - the highest reported for any carbon nanotube TCF - and highly competitive with commercial indium-tin-oxide-TCFs. Furthermore, we demonstrate that thin film transistors fabricated from these highly individual SWCNTs reach charge carrier mobilities up to 100 cm(2) V(-1)s(-1) and ON/OFF-ratios up to 10(6). (C) 2016 Elsevier Ltd. All rights reserved.
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