Transient gain analysis of gain-switched semiconductor lasers during pulse lasing.

Shaoqiang Chen,Takashi Ito,Akifumi Asahara,Hidekazu Nakamae,Takahiro Nakamura,Masahiro Yoshita,Changsu Kim,Bao-Ping Zhang,Hiroyuki Yokoyama,Tohru Suemoto,Hidefumi Akiyama
DOI: https://doi.org/10.1364/AO.54.010438
IF: 1.9
2015-01-01
Applied Optics
Abstract:We analyzed the transient gain properties of three gain-switched semiconductor lasers with different materials and cavity structures during pulse lasing. All the semiconductor lasers were pumped with impulse optical pumping, and all the generated gain-switched output pulses were well described by exponential functions in their rise parts, wherein the transient gains were derived according to the rate-equation theoretical model. In spite of the different laser structures and materials, the results consistently demonstrated that a higher transient gain produces shorter output pulses, indicating the dominant role of higher transient gain in the generation of even shorter gain-switched pulses with semiconductor lasers. (C) 2015 Optical Society of America
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