Anomalous Behavior of the Quasi-One-dimensional Quantum Material Na2OsO4 at High Pressure

R. Sereika,K. Yamaura,Y. Jia,S. Zhang,C. Jin,H. Yoon,M. Y. Jeong,M. J. Han,D. L. Brewe,S. M. Heald,S. Sinogeikin,Y. Ding,H. -K. Mao
DOI: https://doi.org/10.1016/j.mtphys.2018.12.001
IF: 11.021
2019-01-01
Materials Today Physics
Abstract:Na_2OsO_4 is an unusual quantum material that, in contrast to thecommon 5d^2 oxides with spins = 1, owns a magnetically silent groundstate with spin = 0 and a band gap at Fermi level attributed to a distortion inthe OsO_6 octahedral sites. In this semiconductor, our low-temperatureelectrical transport measurements indicate an anomaly at 6.3 K with a power-lawbehavior inclining through the semiconductor-to-metal transition observed at 23GPa. Even more peculiarly, we discover that before this transition, thematerial becomes more insulating instead of merely turning into a metalaccording to the conventional wisdom. To investigate the underlying mechanisms,we applied experimental and theoretical methods to examine the electronic andcrystal structures comprehensively, and conclude that the enhanced insulatingstate at high pressure originates from the enlarged distortion of theOsO_6. It is such a distortion that widens the band gap and decreases theelectron occupancy in Os's t_2g orbital through an interplay of thelattice, charge, and orbital in the material, which is responsible for thechanges observed in our experiments.
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