In Situ Back‐Contact Passivation Improves Photovoltage and Fill Factor in Perovskite Solar Cells

Furui Tan,Hairen Tan,Makhsud I. Saidaminov,Mingyang Wei,Mengxia Liu,Anyi Mei,Peicheng Li,Bowen Zhang,Chih-Shan Tan,Xiwen Gong,Yongbiao Zhao,Ahmad R. Kirmani,Ziru Huang,James Z. Fan,Rafael Quintero-Bermudez,Junghwan Kim,Yicheng Zhao,Oleksandr Voznyy,Yueyue Gao,Feng Zhang,Lee J. Richter,Zheng-Hong Lu,Weifeng Zhang,Edward H. Sargent
DOI: https://doi.org/10.1002/adma.201807435
IF: 29.4
2019-01-01
Advanced Materials
Abstract:Organic-inorganic hybrid perovskite solar cells (PSCs) have seen a rapid rise in power conversion efficiencies in recent years; however, they still suffer from interfacial recombination and charge extraction losses at interfaces between the perovskite absorber and the charge-transport layers. Here, in situ back-contact passivation (BCP) that reduces interfacial and extraction losses between the perovskite absorber and the hole transport layer (HTL) is reported. A thin layer of nondoped semiconducting polymer at the perovskite/HTL interface is introduced and it is shown that the use of the semiconductor polymer permits-in contrast with previously studied insulator-based passivants-the use of a relatively thick passivating layer. It is shown that a flat-band alignment between the perovskite and polymer passivation layers achieves a high photovoltage and fill factor: the resultant BCP enables a photovoltage of 1.15 V and a fill factor of 83% in 1.53 eV bandgap PSCs, leading to an efficiency of 21.6% in planar solar cells.
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