Enhanced Interfacial Dzyaloshinskii-Moriya Interactions in Annealed Pt/Co/MgO Structures.

Anni Cao,Runze Chen,Xinran Wang,Xueying Zhang,Shiyang Lu,Shishen Yan,Bert Koopmans,Weisheng Zhao
DOI: https://doi.org/10.1088/1361-6528/ab62cd
IF: 3.5
2019-01-01
Nanotechnology
Abstract:The interfacial Dzyaloshinskii-Moriya interaction (iDMI) is attracting great interest for spintronics. An iDMI constant larger than 3 mJ m-2 is expected to minimize the size of skyrmions and to optimize the domain-wall dynamics. In this study, we experimentally demonstrate a giant iDMI in Pt/Co/X/MgO ultra-thin film structures with perpendicular magnetization. The iDMI constants were measured using a field-driven creep regime domain expansion method. The enhancement of iDMI with an atomically thin insertion of Ta and Mg is comprehensively understood with the help of ab-initio calculations. Thermal annealing has been used to crystallize the MgO thin layer to improve the tunneling magneto-resistance (TMR), but interestingly it also provides a further increase of the iDMI constant. An increase of the iDMI constant of up to 3.3 mJ m-2 is shown, which is promising for the scaling down of skyrmion electronics.
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