Near-Infrared Annihilation of Conductive Filaments in Quasiplane MoSe2/Bi2Se3 Nanosheets for Mimicking Heterosynaptic Plasticity

Yan Wang,Jing Yang,Zhanpeng Wang,Jinrui Chen,Qing Yang,Ziyu Lv,Ye Zhou,Yongbiao Zhai,Zongxiao Li,Su-Ting Han
DOI: https://doi.org/10.1002/smll.201805431
IF: 13.3
2019-01-01
Small
Abstract:It is desirable to imitate synaptic functionality to break through the memory wall in traditional von Neumann architecture. Modulating heterosynaptic plasticity between pre- and postneurons by another modulatory interneuron ensures the computing system to display more complicated functions. Optoelectronic devices facilitate the inspiration for high-performance artificial heterosynaptic systems. Nevertheless, the utilization of near-infrared (NIR) irradiation to act as a modulatory terminal for heterosynaptic plasticity emulation has not yet been realized. Here, an NIR resistive random access memory (RRAM) is reported, based on quasiplane MoSe2/Bi2Se3 heterostructure in which the anomalous NIR threshold switching and NIR reset operation are realized. Furthermore, it is shown that such an NIR irradiation can be employed as a modulatory terminal to emulate heterosynaptic plasticity. The reconfigurable 2D image recognition is also demonstrated by an RRAM crossbar array. NIR annihilation effect in quasiplane MoSe2/Bi2Se3 nanosheets may open a path toward optical-modulated in-memory computing and artificial retinal prostheses.
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