Improving Photocatalytic Hydrogen Production through Switching Charge Kinetics from Type-I to Z-scheme via Defective Engineering
Shuang Wang,Mengjie Yao,Yuye Cheng,Kai Ding,Minghao Dou,Hongyu Shao,Shuaitong Xue,Shenjie Li,Yanyan Chen
DOI: https://doi.org/10.1039/d3dt03043a
IF: 4
2023-10-18
Dalton Transactions
Abstract:By providing spatial separation of the active site and retaining high oxidative and reducing capacity, the direct Z-Scheme heterostructure is considered to be the most potential structure in yeild of photo-electric response. However, challenges still exist in the directional transfer of charge carriers between two semiconductors in direct Z-Scheme structures. In this regard, through constructing Vzn defect and p-n junction, a direct Z-Scheme ZnxCd1-xS@ZnS-NiS heterostructure was gained for the the regulated electronic structure which ensuring the high yield hydrogen properties. The Zn vacancy in the partially coated ZnS shell led to the Vzn energy level, and the addition of NiS led to the p-n structure which cause a drastic downshift of band edge potentials in comparison to that of pristine CdS. This variation gave birth to a staggered band edge alignment between ZnxCd1-xS and NiS, resulting in charge transfer kinetics variation from type-I to direct Z-scheme. Through careful characterization, it was found that the optimal photocatalytic hydrogen precipitation activity reached 16683.6 μmol·g-1·h-1, which was 70 times that of CdS, and this improvement was considered to form a spatial barrier, providing a clear direction and path for carrier transmission.
chemistry, inorganic & nuclear