Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Memristive Devices with Highly Repeatable Analog States Boosted by Graphene Quantum Dots

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning

Highly-reproducible Nonvolatile Memristive Devices Based on Polyvinylpyrrolidone: Graphene Quantum-Dot Nanocomposites

Phosphorylation Enables Nano‐Graphene for Tunable Artificial Synapses

Photoreduced nanocomposites of graphene oxide/N-doped carbon dots toward all-carbon memristive synapses

Flexible Artificial Memristive Synapse Constructed from Solution‐Processed MgO–Graphene Oxide Quantum Dot Hybrid Films

Compacted Self‐Assembly Graphene with Hydrogen Plasma Surface Modification for Robust Artificial Electronic Synapses of Gadolinium Oxide Memristors

Controllable High-Performance Memristors Based on 2D Fe2GeTe3 Oxide for Biological Synapse Imitation

A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems

MoS2 Quantum Dot-Optimized Conductive Channels for a Conjugated Polymer-Based Synaptic Memristor.

Memristors for Memory and Computing Applications

Metaplasticity‐Enabled Graphene Quantum Dot Devices for Mitigating Catastrophic Forgetting in Artificial Neural Networks

Artificial Synapses Based on an Optical/Electrical Biomemristor

Low‐Power, Electrochemically Tunable Graphene Synapses for Neuromorphic Computing

Memristive Devices Based on Necklace-like Structure Ag@TiO2 Nanowire Networks for Neuromorphic Learning and Reservoir Computing

Controllable high-performance memristors based on 2D Fe 2 GeTe 3 oxide for biological synapse imitation

Operating Mechanisms of Highly-Reproducible Write-Once-Read-Many-Times Memory Devices Based on Graphene Quantum Dot: Poly(Methyl Silsesquioxane) Nanocomposites

Improving the Recognition Accuracy of Memristive Neural Networks Via Homogenized Analog Type Conductance Quantization

Organic Heterojunction Memristors with Enhanced Tunable Resistive States for Artificial Synapses

Thousands of conductance levels in memristors monolithically integrated on CMOS