Progress in the preparation and physical properties of two-dimensional Cr-based chalcogenide materials and heterojunctions
Xiulian Fan,Ruifeng Xin,Li Li,Bo Zhang,Cheng Li,Xilong Zhou,Huanzhi Chen,Hongyan Zhang,Fangping OuYang,Yu Zhou
DOI: https://doi.org/10.1007/s11467-023-1342-y
2023-12-11
Frontiers of Physics
Abstract:Two-dimensional transition metal dichalcogenides (TMDs) exhibit promising application prospects in the domains of electronic devices, optoelectronic devices and spintronic devices due to their distinctive energy band structures and spin-orbit coupling properties. Cr-based chalcogenides with narrow or even zero bandgap, covering from semiconductors to metallic materials, have considerable potential for wide-band photodetection and two-dimensional magnetism. Currently, the preparation of 2D CrX n (X = S, Se, Te) nanosheets primarily relies on chemical vapor deposition (CVD) and molecule beam epitaxy (MBE), which enable the production of high-quality large-area materials. This review article focuses on recent progress of 2D Cr-based chalcogenides, including unique crystal structure of the CrX n system, phase-controlled synthesis, and heterojunction construction. Furthermore, a detailed introduction of room-temperature ferromagnetism and electrical/optoelectronic properties of 2D CrX n is presented. Ultimately, this paper summarizes the challenges associated with utilizing 2D Cr-based chalcogenides in preparation strategies, optoelectronics devices, and spintronic devices while providing further insights.
physics, multidisciplinary