Free-Standing Atomically Thin ZnO Layers via Oxidation of Zinc Chalcogenide Nanosheets.

Zheng Wang,Lu Gan,Haiping He,Zhizhen Ye
DOI: https://doi.org/10.1021/acsami.7b02425
IF: 9.5
2017-01-01
ACS Applied Materials & Interfaces
Abstract:Monolayer ZnO represents a class of new two-dimensional (2D) materials that are expected to exhibit unique optoelectronic properties and applications. Here we report a novel strategy to synthesize free-standing atomically thin ZnO layers via the oxidation of hydrothermally grown ultrathin zinc chalcogenide nanosheets. With micrometer-scaled lateral size, the obtained ultrathin ZnO layer has a thickness of ∼2 nm, and the layered structure still maintained well after high temperature oxidation. The thermal treatment strongly improves the crystal quality as well without inducing cracks or pinholes in the ultrathin layers. The atomically thin ZnO layers are highly luminescent with dominant green emission. High quality white light is obtained from the mixed phosphors containing the ZnO layers, exhibiting their potential as compelling ultraviolet-excited phosphors.
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