A Metal-Insulator Transition of the Buried MnO 2 Monolayer in Complex Oxide Heterostructure.

Heng-Jui Liu,Jheng-Cyuan Lin,Yue-Wen Fang,Jing-Ching Wang,Bo-Chao Huang,Xiang Gao,Rong Huang,Philip R Dean,Peter D Hatton,Yi-Ying Chin,Hong-Ji Lin,Chien-Te Chen,Yuichi Ikuhara,Ya-Ping Chiu,Chia-Seng Chang,Chun-Gang Duan,Qing He,Ying-Hao Chu
DOI: https://doi.org/10.1002/adma.201602281
IF: 29.4
2016-01-01
Advanced Materials
Abstract:A novel artificially created MnO2 monolayer system is demonstrated in atomically controlled epitaxial perovskite heterostructures. With careful design of different electrostatic boundary conditions, a magnetic transition as well as a metal-insulator transition of the MnO2 monolayer is unveiled, providing a fundamental understanding of dimensionality-confined strongly correlated electron systems and a direction to design new electronic devices.
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