Vapor‐Assisted In Situ Recrystallization for Efficient Tin‐Based Perovskite Light‐Emitting Diodes
Fang Zhang,Hao Min,Ya Zhang,Zhiyuan Kuang,Jiaqi Wang,Ziqian Feng,Kaichuan Wen,Lei Xu,Chao Yang,Haokun Shi,Chunxue Zhuo,Nana Wang,Jin Chang,Wei Huang,Jianpu Wang
DOI: https://doi.org/10.1002/adma.202203180
IF: 29.4
2022-07-31
Advanced Materials
Abstract:Tin‐based perovskites are promising candidates to replace their toxic lead‐based counterparts in optoelectronic applications, such as light‐emitting diodes (LEDs). However, the development of tin perovskite LEDs is slow due to the challenge of obtaining high quality tin perovskite films. Here, a vapor‐assisted spin‐coating (VASC) method is developed to achieve high quality tin perovskites and high efficiency LEDs. It is revealed that solvent vapor can lead to in situ recrystallization of tin perovskites during the film formation process, thus significantly improving the crystalline quality with reduced defects. An antioxidant additive is further introduced to suppress the oxidation of Sn2+ and increase the photoluminescence quantum efficiency up to ∼30%, which is an ∼4‐fold enhancement in comparison with that of the control method. As a result, efficient tin perovskite LEDs are achieved with a peak external quantum efficiency of 5.3%, which is among the highest efficiency of lead‐free perovskite LEDs. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology