Abstract:Accurate computational predictions of band gaps are of practical importance to the modeling and development of semiconductor technologies, such as (opto)electronic devices and photoelectrochemical cells. Among available electronic-structure methods, density-functional theory (DFT) with the Hubbard U correction (DFT+U) applied to band edge states is a computationally tractable approach to improve the accuracy of band gap predictions beyond that of DFT calculations based on (semi)local functionals. At variance with DFT approximations, which are not intended to describe optical band gaps and other excited-state properties, DFT+U can be interpreted as an approximate spectral-potential method when U is determined by imposing the piecewise linearity of the total energy with respect to electronic occupations in the Hubbard manifold (thus removing self-interaction errors in this subspace), thereby providing a (heuristic) justification for using DFT+U to predict band gaps. However, it is still frequent in the literature to determine the Hubbard U parameters semiempirically by tuning their values to reproduce experimental band gaps, which ultimately alters the description of other total-energy characteristics. Here, we present an extensive assessment of DFT+U band gaps computed using self-consistent ab initio U parameters obtained from density-functional perturbation theory to impose the aforementioned piecewise linearity of the total energy. The study is carried out on 20 compounds containing transition-metal or p-block (group III-IV) elements, including oxides, nitrides, sulfides, oxynitrides, and oxysulfides. By comparing DFT+U results obtained using nonorthogonalized and orthogonalized atomic orbitals as Hubbard projectors, we find that the predicted band gaps are extremely sensitive to the type of projector functions and that the orthogonalized projectors give the most accurate band gaps, in satisfactory agreement with experimental data. This work demonstrates that DFT+U may serve as a useful method for high-throughput workflows that require reliable band gap predictions at moderate computational cost.

Effect of Hartree-Fock Pseudopotentials on Local Density Functional Theory Calculations.

Effect of Hartree-Fock Pseudopotential on the First-principles Electronic Structure

DFT+U+J with linear response parameters predicts non-magnetic oxide band gaps with hybrid-functional accuracy

Density-functional theory methods for electronic band structure properties of materials

Effects of Non-local Pseudopotentials on the Electrical and Thermal Transport Properties of Aluminum: A Density Functional Theory Study

High-Quality Local Pseudopotentials for Metals

Communication: Comparing Ab Initio Methods of Obtaining Effective U Parameters for Closed-Shell Materials

Extended Hartree-Fock method based on pair density functional theory

Efficient Estimation of Band Gaps in Transition-Metal Oxides and Chalcogenides using Density Functional Theory

Atoms, dimers, and nanoparticles from orbital-free density-potential functional theory

Putting error bars on density functional theory

Improving Band Gap Prediction in Density Functional Theory from Molecules to Solids

Transferable local pseudopotentials for magnesium, aluminum and silicon

Nonlocal pseudopotential energy density functional for orbital-free density functional theory

Using the electron localization function to correct for confinement physics in semi-local density functional theory

Extensive Benchmarking of DFT+U Calculations for Predicting Band Gaps

Accurate Electron-phonon Interactions from Advanced Density Functional Theory

DFT-1/2 and shell DFT-1/2 methods: Electronic structure calculation for semiconductors at LDA complexity

A Nonempirical Scaling Correction Approach for Density Functional Methods Involving Substantial Amount of Hartree-Fock Exchange.

Computing total energies in complex materials using charge self-consistent DFT+DMFT

Wannier–Koopmans Method Calculations for Transition Metal Oxide Band Gaps