Abstract:Applying the ab initio pseudo. potential technique, we had predicted the lattice structures, density of states, phonon dispersion curves of the recently. discovered tetragonal, monoclinic and orthorhombic phases of Ge3N4. The negative formation enthalpy, the satisfactory of Born's stability criteria and no imaginary frequency can be seen in the phonon dispersion curves proof that the three Ge3N4 polymorphs can retain their stabilities in the pressure range of 0-20 GPa. The temperature affects the cell volume, thereby decreasing the bulk modulus. The band gaps show that Ge3N4 are semiconductors, while obvious s-p hybridizations can be seen in the density of states. The band gaps decrease with applied pressure, which is due mainly to the generation of non. local electrons. Then, the quasi. harmonic approximation is used to study the thermodynamic properties of Ge3N4. The results show that the thermal expansion coefficient, entropy, heat capacity, Debye temperature and Gruneisen parameter are significantly affected by both temperature and pressure. The thermal expansions of m-Ge3N4 and t-Ge3N4 are three and two times greater than that of o-Ge3N4, respectively. The lattice vibration frequency of o-Ge3N4 keeps unchanged at different temperatures. Our results are concordant with the experimental data and the previous results. Therefore, the present results indicate that the combination of ab initio calculations and quasi. harmonic approximation is an efficient method to simulate the high. temperature behaviors of different Ge3N4 polymorphs. Generally speaking,

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