Universal Scaling of Intrinsic Resistivity in Two‐Dimensional Metallic Borophene

Jin Zhang,Jia Zhang,Liujiang Zhou,Cai Cheng,Chao Lian,Jian Liu,Sergei Tretiak,Johannes Lischner,Feliciano Giustino,Sheng Meng
DOI: https://doi.org/10.1002/anie.201800087
2018-01-01
Angewandte Chemie
Abstract:Two-dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties. A comprehensive first-principles study is reported of the intrinsic electrical resistivity of emerging borophene structures. The resistivity is highly dependent on different polymorphs and electron densities of borophene. Interestingly, a universal behavior of the intrinsic resistivity is well-described using the Bloch-Grüneisen model. In contrast to graphene and conventional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities, while the Bloch-Grüneisen temperature is nearly fixed at 100 K. This work suggests that monolayer boron can serve as intriguing platform for realizing tunable two-dimensional electronic devices.
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