Advances in Strain Engineering on Oxide Heteroepitaxy
Pao-Wen Shao,Ying‐Hao Chu
DOI: https://doi.org/10.1016/j.matt.2021.05.016
IF: 18.9
2021-01-01
Matter
Abstract:Strain engineering via heteroepitaxy alters the ground state of material. Yet, the strain is fixed once the substrate is determined. Recently, Deng et al. proposed continuous strain applying via tuning the thickness of the buffer layer. This result extends the possibility of compatibility with commercial substrate, offering a significant and practical breakthrough in the development of strain engineering. Strain engineering via heteroepitaxy alters the ground state of material. Yet, the strain is fixed once the substrate is determined. Recently, Deng et al. proposed continuous strain applying via tuning the thickness of the buffer layer. This result extends the possibility of compatibility with commercial substrate, offering a significant and practical breakthrough in the development of strain engineering. The atomic arrangement of solid state determines the fundamental properties of materials. The characteristics of crystalline materials are attributed to the periodic configuration of atoms. Thus, in order to understand and tune the properties of crystalline materials, a unit cell composed of lattice and whose basis serves as a fundamental building block. Therefore, the means to alter the unit cell is a basic approach to tune the ground state and in turn modify the properties of materials. Typically, it can be implemented by applying mechanical stress to induce strain, resulting in a deformation of the unit cell. Figures 1A–1D show various kinds of strain to change the unit cell by mechanical stresses. Normal stresses, including compressive and tensile ones, induce the dimension change of the unit cell, and shear stress together with torsion modify the shape of the unit cell. Whether permanent deformation occurs depends on the strength of stress. In the region of elastic deformation, the strain will be released when the stress is removed, while the formation of defects can occur in the region of plastic deformation, forming a permanent deformation of the material. Therefore, the research field of creating the alteration of the unit cell as a new ground state is called “strain engineering”.1Chen Y. Lei Y. Li Y. Yu Y. Cai J. Chiu M.-H. Rao R. Gu Y. Wang C. Choi W. et al.Strain engineering and epitaxial stabilization of halide perovskites.Nature. 2020; 577: 209-215Crossref PubMed Scopus (217) Google Scholar Among various kinds of materials, strongly correlated electron systems, such as complex oxides, are exciting materials because of the interplay among lattice, charge, orbital, and spin degrees of freedom, resulting in intriguing multifunctionalities and showing great potential for next-generation electronics.2Vaz C.A.F. Hoffman J. Ahn C.H. Ramesh R. Magnetoelectric coupling effects in multiferroic complex oxide composite structures.Adv. Mater. 2010; 22: 2900-2918Crossref PubMed Scopus (724) Google Scholar Any modification on the unit cell of this material category can result in a significant change of material properties.3Ramesh R. Schlom D.G. Creating emergent phenomena in oxide superlattices.Nat. Rev. Mater. 2019; 4: 257-268Crossref Scopus (99) Google Scholar Thus, the growth of complex oxide heteroepitaxy represents a playground for strain engineering since the extrinsic effect such as grain boundary can be minimized. During the epitaxial growth, the mismatches between lattice or thermal expansion can all be used to introduce strain. In addition, the epitaxial growth typically is implemented with the same category of materials such as oxides or nitrides, and the difference of thermal expansion coefficient is relatively small. Therefore, taking advantage of lattice mismatch is the mainstream along this research direction. In general, in the field of strain engineering via heteroepitaxy, two key characteristics should be emphasized: (1) the limit of substrate selection, which hinders the continuous tuning of the strain state (Figure 1E), and (2) the limit of film thickness, as the strain relaxation happens with the increase of thickness. Besides tuning the ground state, advanced strain engineering has been extended to control the domain structures.4Martin L.W. Rappe A.M. Thin-film ferroelectric materials and their applications.Nat. Rev. Mater. 2016; 2: 16087Crossref Scopus (383) Google Scholar In principle, there are degenerate domain configurations with equivalent energy state, but under stimulus (such as anisotropic strain by substrate selection), the boundary conditions of domain formation are modified, and the degeneracy can be broken to gain the domain control. For instance, ferroelectrics form domain structures to minimize the total energy of the system. Because the lattice misfit, i.e., strain, is induced at the interface between substrate and film, the interaction becomes weaker with the increase of film thickness. Therefore, many efforts were made to overcome these limitations. For example, the thickness limit can be broken when vertical heteroepitaxial nanostructure is introduced, in which the strain is imposed in the lateral direction throughout the entire film, thus, it is independent of thickness.5Harrington S.A. Zhai J. Denev S. Gopalan V. Wang H. Bi Z. Redfern S.A. Baek S.H. Bark C.W. Eom C.B. et al.Thick lead-free ferroelectric films with high Curie temperatures through nanocomposite-induced strain.Nature Nanotechnol. 2011; 6: 491-495Crossref PubMed Scopus (186) Google Scholar In particular, the continuous tuning can be realized by two-step processes developed recently: (1) fabrication of strain-free epitaxial film, and (2) the application of external mechanical stress. For instance, the free-standing epitaxial film can be obtained via either a laser or solution lift-off process to remove the substrate clamping effect.6Ji D. Cai S. Paudel T.R. Sun H. Zhang C. Han L. Wei Y. Zang Y. Gu M. Zhang Y. et al.Freestanding crystalline oxide perovskites down to the monolayer limit.Nature. 2019; 570: 87-90Crossref PubMed Scopus (202) Google Scholar Then, a transfer process is carried out to place the free-standing film on piezostage to impose strain. Recently, a free-standing La0.7Ca0.3MnO3 layer was used as a model system, in which extremely large uniaxial or biaxial strain can be acquired to control the ground state with the change of magnetotransport behaviors.7Hong S.S. Gu M. Verma M. Harbola V. Wang B.Y. Lu D. Vailionis A. Hikita Y. Pentcheva R. Rondinelli J.M. Hwang H.Y. Extreme tensile strain states in La0.7Ca0.3MnO3 membranes.Science. 2020; 368: 71-76Crossref PubMed Scopus (51) Google Scholar Thus far, only tensile strain has an easy application. More intriguing phenomena can be expected if the interaction among atoms can be strong while imposing a compressive strain. Another approach is to use van der Waals heteroepitaxy to provide a weak interaction between substrate and film, resulting in strain-free epitaxial films. Benefit from the mechanical flexibility of two-dimensional substrates, such as muscovite, either compressive or tensile strain can be applied. For instance, a heteroepitaxy of ZnO/muscovite was built with the ability of applying strain by mechanical bending.8Yen M. Lai Y.-H. Zhang C.-L. Cheng H.-Y. Hsieh Y.-T. Chen J.-W. Chen Y.-C. Chang L. Tsou N.-T. Li J.-Y. Chu Y.H. Giant resistivity change of transparent ZnO/Muscovite heteroepitaxy.ACS Appl. Mater. Interfaces. 2020; 12: 21818-21826Crossref PubMed Scopus (7) Google Scholar A giant modulation of resistivity can be attained with the great potential for flex-sensors. Both approaches show promising results of continuous strain tuning and reveal the great potential for practical applications in soft technology. However, based on flexible substrate without stretchability, such an approach provides a uniaxial strain rather than a biaxial one. In the pursuit of practical applications, two key issues should be considered. First, although various substrates with different lattice parameters are commercially available, strain tuning remains unchangeable once the substrate is selected (Figure 1E). Second, their cost is relatively high compared with the expense of conventional semiconductor substrates, such as Si and sapphire. Most carriers are either based on semiconductor substrates or polycrystalline plates, so an integration with these carriers is necessary in order to achieve a large-scale mass production and further reduce the cost. Recently, a study reported by Deng et al.9Deng X. Chen C. Chen D. Cai X. Yin X. Xu C. Sun F. Li C. Li Y. Xu H. et al.Strain engineering of epitaxial oxide heterostructures beyond substrate limitations.Matter. 2021; 4: 1323-1334Abstract Full Text Full Text PDF Scopus (9) Google Scholar delivers a brilliant idea to overcome the bottleneck of strain engineering. In this study, a model complex oxide, multiferroic BiFeO3 was selected because of the mutual coupling between electric and magnetic orders and the variety of phase under different strain states. An epitaxial buffer layer of Ca0.96Ce0.04MnO3 was deposited on different substrates with the control of thickness. By tuning the Ca0.96Ce0.04MnO3 film thickness, due to the strain relaxation, the Ca0.96Ce0.04MnO3 film can possess different lattice parameters, meaning different strain states, then BiFeO3 film was epitaxially placed on the Ca0.96Ce0.04MnO3 layer to acquire the continuous phase control. The key features of this approach are shown in Figure 1F. They overcome the limitation on the selection of substrate materials, as the strain is controlled by the thickness of the buffer layer to provide a continuous straining tuning. Additionally, they enhance the possibility of integration with commercially available and cheap carriers if a correct combination of buffer layer with commercially available cheap substrates is selected. Such a demonstration extends the scope of the strain engineering and inspires further exploration toward practical application. Strain engineering via heteroepitaxy keeps expanding because of the power of tuning ground state. Here, we would like to highlight some future directions. Currently, most efforts were made to use normal stress to change the size of unit cells. Less attention was paid to create shear strain, which can also be an effective way to adjust the interaction among atoms along certain directions, and more intriguing phenomena can be expected. In the meantime, because of the strain relaxation, non-uniform strain exists—which is typically ignored due to the lack of control. Even so, the strain gradient can introduce flexo-related phenomena, which can be used to create new functionalities. For instance, dielectric SrTiO3 becomes highly conductive under large strain gradients. By the virtue of scanning probe microscopy, local strain gradient is applied by diamond tip, demonstrating non-destructive and reversible electric states, i.e., an insulating and conductive one, in dielectric SrTiO3.10Park S.M. Wang B. Paudel T. Park S.Y. Das S. Kim J.R. Ko E.K. Lee H.G. Park N. Tao L. Colossal flexoresistance in dielectrics.Nat. Commun. 2020; 11: 2586Crossref PubMed Scopus (11) Google Scholar Flexoelectricity achieved by AFM nanolithography reveals the feasibility of flexo-related electronics, yet this local phenomenon displays slow process speed. Thus, a fundamental fabricational method to impose non-uniform strain to induce a strain gradient for flexo-related properties needs to be developed. The fulfilment of these future directions can complete the field of strain engineering, providing more design on the ground states of materials. Strain engineering of epitaxial oxide heterostructures beyond substrate limitationsDeng et al.MatterMarch 3, 2021In BriefBy inserting an interface layer and tailoring its gradual strain relaxation, continuous epitaxial strain can be introduced in BiFeO3 thin films beyond substrate limitations, enabling the achievement of continuous O-R-T phase transition on a single substrate and the design of an R/T morphotropic phase boundary on SrTiO3 and NdScO3 substrates. Full-Text PDF Open Archive