Abstract:Enhancing photoluminescence (PL) in single-layer transition metal dichalcogenides has garnered significant interest, particularly for advancing high-performance 2D electronics and optoelectronics. The combination of surface engineering and contemporary growth methods has provided a platform for investigating optical signals. In this study, we present variations in PL and Raman signals of single-layer MoS2 flakes grown conformally using the glass-assisted CVD method on square-patterned surfaces with varying well depths. PL spectroscopy revealed a systematic and pronounced enhancement in intensities as the valley thickness decreased from 285 nm to 225 nm. Conversely, for the hill regions of the samples, the PL intensity initially increased with decreasing valley thickness and then decreased, despite the hill regions having a constant thickness of 300 nm. On the other hand, PL maps did not exhibit a systematic dependence of intensities on the hill-valley thickness distinction, contrary to expected results based on literature data for similar materials on flat surfaces. The origin of the intensity oscillations was attributed to possible mechanisms, including thickness-dependent interference and strain-related exciton funneling effects. Additionally, Raman measurements revealed irregular variations in intensity in hill regions, dependent on the thicknesses of the underlying SiO2 layers. Furthermore, we observed that the sizes of the flakes increased as the well depths of the underlying patterned surface decreased. This phenomenon might be attributed to alterations in the carrier gas flow pattern and varying temperature gradients between the hills and valleys. These results hold substantial potential to open new avenues for the integration of 2D transition metal dichalcogenides into on-chip electronic and optoelectronic devices.

Vacuum Level Dependent Photoluminescence in Chemical Vapor Deposition-Grown Monolayer MoS 2

Analysis of Photoluminescence Behavior of High-Quality Single-Layer MoS2

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Probing the Intrinsic Optical Quality of CVD Grown MoS2

Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding

Pressure confinement effect in MoS2 monolayers.

Epitaxial Monolayer MoS2 on Mica with Novel Photoluminescence.

Shape-Uniform, High-Quality Monolayered MoS2 Crystals for Gate-Tunable Photoluminescence

Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation

Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS2

Optical Signal Investigation of Monolayer MoS2 Grown Via Glass-Assisted CVD On Patterned Surfaces

Remarkable Quality Improvement of As-Grown Monolayer MoS2 by Sulfur Vapor Pretreatment of SiO2/Si Substrates

Vacuum ultraviolet excitation luminescence spectroscopy of few-layered MoS2

Investigation of CVD growth of 2D MoS2 on MXene Structures with Photoluminescence Mapping and Fluorescence Lifetime Imaging Microscopy

Revealing the Competition between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS 2

Effect of strain and sulfur vacancies on the luminescence and valley polarization properties of CVD grown monolayer MoS$_2$ films

Photoluminescence Nonuniformity from Self-Seeding Nuclei in CVD-grown Monolayer MoSe2

Broadband Optical Properties of Large-Area Monolayer CVD Molybdenum Disulfide

Interfacial Effects on the Photoluminescence Properties of Epitaxial Monolayer MoS2 on MoO2 on C‐sapphire

Highly Enhanced Photoluminescence of Monolayer MoS2 with Self‐Assembled Au Nanoparticle Arrays

Intrinsically Substitutional Carbon Doping in CVD-Grown Monolayer MoS2 and the Band Structure Modulation