Abstract:SmBa 2 Cu 3 O 7−δ (SmBCO) thin films and CeO 2 buffer layers were deposited on γ-cut sapphire by pulsed laser deposition (PLD) and characterized with X-ray diffraction (XRD) and atomic force microscope (AFM). The θ–2θ XRD scans of the SmBCO/CeO 2 /sapphire structures revealed that the CeO 2 and SmBCO films were grown with c -axis perpendicular to the substrate. In Φ-scan XRD patterns, four (103) peaks of the SmBCO film were observed and the peak positions were shifted by 45° from (202) peaks of the CeO 2 films. From the peak shifts we could conclude that the [110] SmBCO crystal axis is parallel to the [100] CeO2 crystal axis. Moreover, pole figure also confirmed that SmBCO films were grown on the substrates epitaxially along in-plane direction. The SmBCO films show very flat surfaces with root mean square (RMS) about 5 nm. In agreement with this crystalline perfection, SmBCO thin films present excellent superconducting properties: T c0 > 90 K, transition width 0.4 K, and J c (77 K) > 2 MA/cm 2 .

Fabrication of SmBa 2 Cu 3 O 7 Films on CeO 2 Buffered Sapphire