Abstract:Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has been inhibited by the need for high temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature of 250 C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low losses for anneal-free nitride core and oxide cladding, enabling 1.77 dB/m loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported 270 C processes, and 8.66 dB/m loss and 4.03 million Q for 800 nm thick nitride. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity. And using a thick nitride micro-resonator, we demonstrate parametric gain and Optical Parametric Oscillation (OPO) with the lowest reported OPO threshold per unit resonator length for low temperature fabricated nitride, and supercontinuum generation over two octaves. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low temperature materials and processes.

Silicon nitride stoichiometry tuning for visible photonic integrated components

Large Bidirectional Refractive Index Change in Silicon-rich Nitride via Visible Light Trimming

Experimental Demonstration of an Apodized-Imaging Chip-Fiber Grating Coupler for Si_3N_4 Waveguides

Anneal-free ultra-low loss silicon nitride integrated photonics

Aluminum nitride integration on silicon nitride photonic circuits: a new hybrid approach towards on-chip nonlinear optics

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

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High-efficiency Apodized-Imaging Chip-Fiber Grating Coupler for Silicon Nitride Waveguides

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Ultra-Low-Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries

High-Efficiency Metamaterial-Engineered Grating Couplers for Silicon Nitride Photonics

Photoluminescence of SiO2/SiNx/SiO2/Si Structures with Off-Stoichiometric Silicon Nitride Layers

Silicon nitride integrated photonics from visible to mid-infrared spectra

Monolithic integration of blue light sources into silicon nitride photonic chips

Engineering Efficient Light Sources for Silicon Photonics: III-V Nano-heterostructures Monolithically Grown on Silicon

High-quality amorphous Silicon Carbide for hybrid photonic integration at low temperature

Near ultraviolet photonic integrated lasers based on silicon nitride

Silicon rich nitride-lithium niobate on insulator platform for photonics integrated circuits

High-performance lasers for fully integrated silicon nitride photonics

Silicon oxynitride platform for linear and nonlinear photonics at NIR wavelengths