Abstract:Reverse engineering (RE) is one of the major security threats to the semiconductor industry due to the involvement of untrustworthy parties in an increasingly globalized chip manufacturing supply chain. RE efforts have already been successful in extracting device level functionalities from an integrated circuit (IC) with very limited resources. Camouflaging is an obfuscation method that can thwart such RE. Existing work on IC camouflaging primarily involves transformable interconnects and/or covert gates where variation in doping and dummy contacts hide the circuit structure or build cells that look alike but have different functionalities. Emerging solutions, such as polymorphic gates based on a giant spin Hall effect and Si nanowire field effect transistors (FETs), are also promising but add significant area overhead and are successfully decamouflaged by the satisfiability solver (SAT)-based RE techniques. Here, we harness the properties of two-dimensional (2D) transition-metal dichalcogenides (TMDs) including MoS2, MoSe2, MoTe2, WS2, and WSe2 and their optically transparent transition-metal oxides (TMOs) to demonstrate area efficient camouflaging solutions that are resilient to SAT attack and automatic test pattern generation attacks. We show that resistors with resistance values differing by 5 orders of magnitude, diodes with variable turn-on voltages and reverse saturation currents, and FETs with adjustable conduction type, threshold voltages, and switching characteristics can be optically camouflaged to look exactly similar by engineering TMO/TMD heterostructures, allowing hardware obfuscation of both digital and analog circuits. Since this 2D heterostructure devices family is intrinsically camouflaged, NAND/NOR/AND/OR gates in the circuit can be obfuscated with significantly less area overhead, allowing 100% logic obfuscation compared to only 5% for complementary metal oxide semiconductor (CMOS)-based camouflaging. Finally, we demonstrate that the largest benchmarking circuit from ISCAS'85, comprised of more than 4000 logic gates when obfuscated with the CMOS-based technique, is successfully decamouflaged by SAT attack in <40 min; whereas, it renders to be invulnerable even in more than 10 h when camouflaged with 2D heterostructure devices, thereby corroborating our hypothesis of high resilience against RE. Our approach of connecting material properties to innovative devices to secure circuits can be considered as a one of a kind demonstration, highlighting the benefits of cross-layer optimization.

Hardware-Efficient Logic Camouflaging for Monolithic 3-D ICs.

Physical Design of Monolithic 3 D ICs with Applications to Hardware Security

Spear and Shield: Evolution of Integrated Circuit Camouflaging

Provably Secure Camouflaging Strategy for IC Protection

Transistor-Level Camouflaged Logic Locking Method For Monolithic 3d Ic Security

Obfuscating the Interconnects: Low-Cost and Resilient Full-Chip Layout Camouflaging

A Modern Approach to IP Protection and Trojan Prevention: Split Manufacturing for 3D ICs and Obfuscation of Vertical Interconnects

Satisfiability Attack-Resistant Camouflaged Two-Dimensional Heterostructure Devices

Best of Both Worlds: Integration of Split Manufacturing and Camouflaging into a Security-Driven CAD Flow for 3D ICs

Is The Secure Ic Camouflaging Really Secure?

A Novel Interconnect Camouflaging Technique using Transistor Threshold Voltage

Mono 3 D to Develop Large-Scale Monolithic 3 D Integrated Circuits

A Module-Level Configuration Methodology for Programmable Camouflaged Logic

Rethinking IC Layout Vulnerability: Simulation-Based Hardware Trojan Threat Assessment with High Fidelity

Reverse Engineering Camouflaged Sequential Integrated Circuits Without Scan Access

Opening the Doors to Dynamic Camouflaging: Harnessing the Power of Polymorphic Devices

Security Closure of IC Layouts Against Hardware Trojans

Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors

Routing Congestion Aware Cell Library Development for Monolithic 3D ICs

3DCAM: A Low Overhead Crosstalk Avoidance Mechanism for TSV-Based 3D ICs

A Timing-driven Analytical Placer for Gate-Level Partitioned Monolithic 3D ICs