Abstract:Due to its outstanding features, graphene has become a vital topic in nanotechnology applications such as optoelectronic devices, sensors, batteries, and biomedical applications. This study has been focused on examining a heavily doped semiconductor in order to fabricate Schottky junction solar cell, where p-type graphene with heavily doped n-type silicon (p-G/n+-Si) Schottky junction solar cell with a top-window structure and active area of 0.11 cm2 has been fabricated using simple techniques without photolithography system. High-quality monolayer graphene sheet was synthesized by CVD method, while the back- and front-metal contacts were achieved by thermal evaporation system using Cr, Ag, and Au. The effect of thermal annealing to the transferred graphene sheet and the p-doping of graphene were also investigated. The results indicate that the annealing treatment has significantly reduced the PMMA residue in the graphene sheet by ~ 75% as well as reduction in the PMMA islands’ height. On the other hand, doping graphene with GO dispersion showed an enhancement in both Jsc = 3.65 mA/cm2 and Voc = 420 mV which is an indication of larger graphene’s work function. The best obtained power conversion efficiency of this cell after annealing treatment and doping was found to be around 2.24%. The results also showed how it is challenging to deal with heavily doped semiconductor in order to make a Schottky junction between graphene and the semiconductor, where the Fill factor was decreased after each processing step.

High Efficiency Graphene Solar Cells by Chemical Doping

Fabrication and photovoltaic conversion enhancement of graphene/n-Si Schottky barrier solar cells by electrophoretic deposition

High Efficient Solar Cell Based on Heterostructure Constructed by Graphene and GaAs Quantum Wells

Chemical Doping and Enhanced Solar Energy Conversion of Graphene/Silicon Junctions

Enhanced Solar Energy Conversion in Au-doped, Single-Wall Carbon Nanotube-Si Heterojunction Cells

Enhanced efficiency of graphene/silicon heterojunction solar cells by molecular doping

Tunable Graphene/Indium Phosphide Heterostructure Solar Cells

Ion Doping of Graphene for High-Efficiency Heterojunction Solar Cells

Remarkable enhancement of graphene/Si Schottky junction solar cell performance with effective chemical treatments

Graphene-On-Silicon Schottky Junction Solar Cells

Graphene/CdTe Heterostructure Solar Cell and Its Enhancement with Photo-Induced Doping

Investigation of graphene-based Schottky junction solar cell with heavy-doped silicon

18.5% Efficient Graphene/gaas Van Der Waals Heterostructure Solar Cell

Multi-type quantum dots photo-induced doping enhanced graphene/semiconductor solar cell

The Enhanced Efficiency of Graphene-Silicon Solar Cells by Electric Field Doping.

Opening the Band Gap of Graphene Through Silicon Doping for the Improved Performance of Graphene/gaas Heterojunction Solar Cells.

Graphene Quantum Dots Assisted Photovoltage and Efficiency Enhancement in Cdse Quantum Dot Sensitized Solar Cells

Boron Doping of Graphene for Graphene–Silicon P–n Junction Solar Cells

Modeling and Simulation of Graphene-Gated Graphene-Gaas Schottky Junction Field-Effect Solar Cell for Its Performance Enhancement

Illumination-Induced Hole Doping for Performance Improvement of Graphene/n-Silicon Solar Cells with P3HT Interlayer

Role of Interfacial Oxide in High-Efficiency Graphene-Silicon Schottky Barrier Solar Cells.