A Mixed-Dimensional Light-Emitting Diode Based on a P-Mos2 Nanosheet and an N-Cdse Nanowire

Pan Li,Kai Yuan,Der-Yuh Lin,Xiaolong Xu,Yilun Wang,Yi Wan,Haoran Yu,Kun Zhang,Yu Ye,Lun Dai

DOI: https://doi.org/10.1039/c7nr05706g

IF: 6.7

2017-01-01

Nanoscale

Abstract:A mixed-dimensional light-emitting diode based on a p-MoS2 nanosheet and an n-CdSe nanowire was realized.

What problem does this paper attempt to address?

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Dawei Di,Ivan Perez-Wurfl,Lingfeng Wu,Yidan Huang,Alessandro Marconi,Andrea Tengattini,Aleksei Anopchenko,Lorenzo Pavesi,Gavin Conibeer

DOI: https://doi.org/10.1063/1.3671671

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Silicon nanocrystals have shown attractive properties for photonic and photovoltaic applications. We demonstrate all-Si light-emitting diodes based on boron-doped Si nanocrystal/c-Si p-n heterojunction structure, which show electroluminescence in the visible/infrared regions. The electroluminescence spectra of these diodes can be modified by changing the quantum confining barriers from SiO2 to Si3N4. Our results are an important demonstration of electroluminescence from boron-doped Si nanocrystals—a wide band gap absorber material for third generation photovoltaics.
Improving Performance of Si/CdS Micro-/Nanoribbon P-N Heterojunction Light Emitting Diodes by Trenched Structure

Shiyuan Huang,Yuanpeng Wu,Xiangyang Ma,Zongyin Yang,Xu Liu,Qing Yang

DOI: https://doi.org/10.1063/1.5030733

IF: 1.697

2018-01-01

AIP Advances

Abstract:Realizing high performance silicon based light sources has been an unremitting pursuit for researchers. In this letter, we propose a simple structure to enhance electroluminescence emission and reduce the threshold of injected current of silicon/CdS micro-/nanoribbon p-n heterojunction visible light emitting diodes, by fabricating trenched structure on silicon substrate to mount CdS micro-/nanoribbon. A series of experiments and simulation analysis favors the rationality and validity of our mounting design. After mounting the CdS micro-/nanoribbon, the optical field confinement increases, and absorption and losses from high refractive silicon substrate are effectively reduced. Meanwhile the sharp change of silicon substrate near heterojunction also facilitates the balance between electron current and hole current, which substantially conduces to the stable amplification of electroluminescence emission in CdS micro-/nanoribbon.
Hot Carriers Assisted Mixed-Dimensional Graphene/mos2/p-Gan Light Emitting Diode

Chang Liu,Yanghua Lu,Xutao Yu,Runjiang Shen,Zhemin Wu,Zunshan Yang,Yanfei Yan,Lixuan Feng,Shisheng Lin

DOI: https://doi.org/10.1016/j.carbon.2022.06.025

IF: 10.9

2022-01-01

Carbon

Abstract:The exploration of two-dimensional (2D) materials in highly performance optoelectronic device is critical for the practical applications. Traditionally, GaN related semiconductors uses complicated multiple quantum wells to increase the overlap of electron and hole waves for highly efficient light emitting diode (LED). In this work, through designing the Graphene/MoS2 heterostructure for increasing the hot electron lifetime and subsequently enhancing the process of carrier multiplication (CM), we successfully realize the highly efficient Graphene/ MoS2/p-GaN LED with external quantum efficiencies (EQE) of 15.89% under 0.625 mA/mm2. Compared with the Graphene/p-GaN LED device, the addition of MoS2 leads to stronger light output and the maximum EQE increased by 61%. The energy bands alignment between MoS2 and GaN squeezes the hole at the MoS2 layer, when the numbers of holes are increased by graphene as a result of CM effect, which recombines with electron at the surface of GaN defects resulting in the strong light output at reversed bias. We believe that this work will bring a brand new insight of realizing high efficient 2D materials based LED and optoelectronic devices.
A Waveguide-Integrated Two-Dimensional Light-Emitting Diode Based on p-Type WSe 2 /n-Type CdS Nanoribbon Heterojunction

Xin Yang,Rong Wu,Biyuan Zheng,Ziyu Luo,Wenxia You,Huawei Liu,Lihui Li,Yushuang Zhang,Qin Tan,Delang Liang,Ying Chen,Junyu Qu,Xiao Yi,Xingjun Wang,Jun Zhou,Huigao Duan,Shuangyin Wang,Shula Chen,Anlian Pan

DOI: https://doi.org/10.1021/acsnano.1c10607

IF: 17.1

2022-02-22

ACS Nano

Abstract:Transition metal dichalcogenides (TMDs) have emerged as two-dimensional (2D) building blocks to construct nanoscale light sources. To date, a wide array of TMD-based light-emitting devices (LEDs) have been successfully demonstrated. Yet, their atomically thin and planar nature entails an additional waveguide/microcavity for effective optical routing/confinement. In this sense, integration of TMDs with electronically active photonic nanostructures to form a functional heterojunction is of crucial importance for 2D optoelectronic chips with reduced footprint and higher integration capacity. Here, we report a room-temperature waveguide-integrated light-emitting device based on a p-type monolayer (ML) tungsten diselenide (WSe2) and n-type cadmium sulfide (CdS) nanoribbon (NR) heterojunction diode. The hybrid LED exhibited clear rectification under forward biasing, giving pronounced electroluminescence (EL) at 1.65 eV from exciton resonances in ML WSe2. The integrated EL intensity against the driving current shows a superlinear profile at a high current level, implying a facilitated carrier injection via intervalley scattering. By leveraging CdS NR waveguides, the WSe2 EL can be efficiently coupled and further routed for potential optical interconnect functionalities. Our results manifest the waveguided LEDs as a dual-role module for TMD-based optoelectronic circuitries.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Surface Plasmon Enhanced Graphene/P-Gan Heterostructure Light-Emitting Diode by Ag Nano-Particles

Zhiqian Wu,Yanghua Lu,Wenli Xu,Yuejiao Zhang,Jianfeng Li,Shisheng Lin

DOI: https://doi.org/10.1016/j.nanoen.2016.10.028

IF: 17.6

2016-01-01

Nano Energy

Abstract:Putting a piece of graphene over p-GaN can form shallow P-N junction near the surface, which can act as light emitting diodes (LEDs) and promise many kinds of light manipulation methods. Herein, we introduce high performance surface plasmon enhanced graphene/p-GaN LEDs by inserting Ag nano-particles (Ag NPs) into the graphene/p-GaN interface. Bidirectional LEDs have been realized with a broad band emission from 550 nm to 650 nm at a forward bias of graphene side and a sharp emission of 400 nm at a reversed bias of graphene. The emission intensity of graphene/Ag NPs/p-GaN is largely enhanced in both forward and reverse bias situation when compared with the bare graphene/p-GaN heterostructure, which is attributed to the surface plasmon resonance of Ag NPs. These results indicate that graphene/Ag NPs/p-GaN heterojunction is a promising candidate for high brightness LEDs.
Enhanced Visible to Near-Infrared Photodetectors Made from MoS2-based Mixed-Dimensional Structures

Shirong Qin,Hanlun Xu,Mengjuan Liu,Nasir Ali,Yansong Chen,Sihan Zhao,Huizhen Wu

DOI: https://doi.org/10.1016/j.apsusc.2022.152594

IF: 6.7

2022-01-01

Applied Surface Science

Abstract:Two-dimensional (2D) photodetectors based on semiconducting transitional metal chalcogenides (TMDs) have attracted much attention because of its unique mechanical and opto-electronic properties which can be integrated into nanoscale-sized opto-electronic devices and complex circuits. However, the photodetection range of 2D TMDs materials based detectors are generally limited within the visible range due to its intrinsic relatively large band-gap. In addition, 2D TMDs materials also suffers from weak light absorption inherited from their atomically thin layers, resulting in a photoresponsivity that can be further improved. Herein, by combining 2D MoS2 with zero-dimensional (0D) PbSe quantum dots (QDs) and Au nanocrystals (NCs), a novel 2D-0D photo detector (i.e., MoS2/PbSe@Au) is fabricated. Our MoS2/PbSe@Au photodetector exploits the 2D MoS2 as the conduction channels and PbSe@Au NCs as light sensitizer, which promote the absorption of the entire device and enable appreciable photodetection extending to the near-infrared (NIR). Prominently, the mixed-dimensional photodetector exhibits high responsivity of 1.22 A/W and detectivity of 1.56*10(9) Jones (cm.Hz(1/2).W-1) at NIR (e.g., 1064 nm) compared with the MoS2 photodetector with PbSe QDs only, which are ascribed to the more efficient two-step charge transfer process between PbSe and MoS2 with the presence of Au NCs. We further identify the new carrier multiplication mechanism when comparing the photoresponse of our photodetectors at 405 nm and 635 nm. We found the extremely high EQE of MoS2/PbSe@Au photodetector at the wavelength of 405 nm (268.1%) could be ascribed to the synergism of carrier multiplication (CM) in PbSe QDs and the photo gating effect induced by Au nanoparticles. Our study demonstrates that the novel mixed-dimensional photodetectors based on CVD-grown MoS2 may provide a new route for designing and realizing high-performance optoelectronic devices with harvesting merits of hybrid nanomaterials.
Unidirectional Doubly Enhanced MoS2 Emission Via Photonic Fano Resonances

Xingwang Zhang,Shinhyuk Choi,Dake Wang,Carl H. Naylor,A. T. Charlie Johnson,Ertugrul Cubukcu

DOI: https://doi.org/10.1021/acs.nanolett.7b02777

IF: 10.8

2017-01-01

Nano Letters

Abstract:Atomically thin transition metal dichalcogenides like MoS2 monolayers exhibit unique luminescent properties. However, weak quantum yield and low light absorption hinder their practical applications in two-dimensional light emitting devices. Here, we report 1300 times enhancement in photoluminescence emission from a MoS2 monolayer via simultaneous Fano resonances in a dielectric photonic crystal. The spatially extended double Fano resonance scheme allows resonant enhancement of both the MoS2 absorption and emission. We also achieve unidirectional emission within a narrow divergence angle of 5° by engineering the Fano resonance angular dispersion. Our approach provides a new platform for efficient light sources with high directionality based on emerging two-dimensional materials.
p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices

Pan Li,Kai Yuan,Der-Yuh Lin,Tingting Wang,Wanying Du,Zhongming Wei,Kenji Watanabe,Takashi Taniguchi,Yu Ye,Lun Dai

DOI: https://doi.org/10.1039/c9ra06667e

IF: 4.036

2019-01-01

RSC Advances

Abstract:A library of two-dimensional (2D) semiconductors with different band gaps offers the construction of van der Waals (vdWs) heterostructures with different band alignments, providing a new platform for developing high-performance optoelectronic devices. Here, we demonstrate all-2D optoelectronic devices based on type-II p-MoS2/n-InSe vdWs heterojunctions operating at the near infrared (NIR) wavelength range. The p-n heterojunction diode exhibits a rectification ratio of similar to 10(2) at V-ds = +/- 2 V and a turn-on voltage of similar to 0.8 V. Under a forward bias exceeding the turn-on voltage and a proper positive back-gate voltage, the all-2D vdWs heterojunction diode exhibits an electroluminescence with an emission peak centered at similar to 1020 nm. Besides, this p-MoS2/n-InSe heterojunction shows a photoresponse at zero external bias, indicating that it can serve as a photodiode working without an external power supply. The as-demonstrated all-2D vdWs heterojunction which can work as both a light-emitting diode and a self-powered photodetector may find applications in flexible wear, display, and optical communication fields, etc.
Silver Nanoparticles-induced Enhancement of Light Extraction in Two-dimensional Light-emitting Diodes

Tianqi Liu,Qiang Fu,Yuanzhe Li,Xu Han,Shixuan Wang,Takashi Taniguchi,Kenji Watanabe,Dongyang Wan,Qi Zhang,Yingbo Zhao,Zhenhua Ni,Fei Ding,Zhenliang Hu,Xueyong Yuan,Junpeng Lu

DOI: https://doi.org/10.1364/ol.498850

IF: 3.6

2023-07-26

Optics Letters

Abstract:Monolayer transition metal dichalcogenides (TMDCs) with direct bandgaps are considered promising candidates for building light-emitting diodes (LEDs). One crucial indicator of their performance is the brightness of electroluminescence (EL). In this study, we fabricate WS2-based LEDs that make full use of the assistance of effective transient-mode charge injection. By introducing self-assembled silver nanoparticles (NPs) on top of the LED, the extraction efficiency is significantly improved, with a 2.9-fold EL enhancement observed in the experiment. Full-wave simulations further confirm that the improvement comes from the scattering capability of silver NPs, with results qualitatively fitting the experiment. This approach, with its compatibility with van der Waals heterostructures, can be further promoted to enhance the brightness of 2D monolayer TMDC-based LEDs.

optics
Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

Jason S. Ross,Philip Klement,Aaron M. Jones,Nirmal J. Ghimire,Jiaqiang Yan,D. G. Mandrus,Takashi Taniguchi,Kenji Watanabe,Kenji Kitamura,Wang Yao,David H Cobden,Xiaodong Xu

DOI: https://doi.org/10.1038/nnano.2014.26

2014-03-04

Abstract:Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability could have significant ramifications. Monolayer transition metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications due to their unique optical properties. Electroluminescence has already been observed from monolayer MoS2 devices. However, the electroluminescence efficiency was low and the linewidth broad due both to the poor optical quality of MoS2 and to ineffective contacts. Here, we report electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath. This structure allows effective injection of electrons and holes, and combined with the high optical quality of WSe2 it yields bright electroluminescence with 1000 times smaller injection current and 10 times smaller linewidth than in MoS2. Furthermore, by increasing the injection bias we can tune the electroluminescence between regimes of impurity-bound, charged, and neutral excitons. This system has the required ingredients for new kinds of optoelectronic devices such as spin- and valley-polarized light-emitting diodes, on-chip lasers, and two-dimensional electro-optic modulators.

Mesoscale and Nanoscale Physics,Materials Science
Mixed-dimensional Vertical Bi2O2Se Nanopillars/si Heterojunctions with the Light Confinement Effect for High-Performance Photodetection

Zhibin Shao,Ming Wu,Kai Wu,Xingxing Hong,Lei Wang,Jiangfeng Gong,Meng Xu,Ke Li,Cheng Zhang,Hong Wang

DOI: https://doi.org/10.1039/d4tc03836c

IF: 6.4

2024-01-01

Journal of Materials Chemistry C

Abstract:Bi2O2Se is considered to be a promising layered semiconductor material in the post-graphene era due to its high mobility, moderate bandgap, excellent air stability, and compatibility with current electronic industries. Heterojunctions based on Bi2O2Se, formed by introducing energy band-aligned heterogeneous semiconductor materials, exhibit significant potential for self-powered photodetection applications. However, currently all the reported Bi2O2Se-based heterojunctions are integrated in thin-layer configurations along Bi2O2Se's basal plane. Their photoelectric conversion performance is still limited by weak light absorption in thin-layer Bi2O2Se heterojunctions. To address this, we demonstrate a novel mixed-dimensional vertical Bi2O2Se nanopillars/Si heterojunction-based photodetector, achieved by depositing one-dimensional n-type Bi2O2Se nanopillars on three-dimensional p-type Si wafers via magnetron sputtering. The light confinement effect of the vertical Bi2O2Se nanopillars extends the light transmission path within Bi2O2Se, effectively mitigating the high reflectivity of planar silicon and the high transmittance of thin-layer Bi2O2Se, thereby enhancing the heterojunction's light absorption. The built-in electric field directed from n-type Bi2O2Se to p-type Si, combined with well-matched energy bands, facilitates the efficient separation of photogenerated electron-hole pairs, improving the photoelectric conversion efficiency and response speed of the heterojunction. The heterojunction photodetector exhibits self-powered characteristics, with a specific detectivity reaching 4.2 x 10(12) Jones and rapid rise/fall times of 24/40 mu s. Furthermore, the heterojunction photodetector demonstrates a broad spectral response, spanning from the ultraviolet to visible to near-infrared light region. Our work paves the way for the development of high-performance optoelectronic devices based on new-generation mixed-dimensional layered semiconductor materials.
Enhancing the Performance of Polymer Light‐Emitting Diodes by Integrating Self‐Assembled Organic Nanowires

Qiaoli Niu,Yan Zhou,Lei Wang,Junbiao Peng,Jian Wang,Jian Pei,Yong Cao

DOI: https://doi.org/10.1002/adma.200702591

IF: 29.4

2008-01-01

Advanced Materials

Abstract:The in situ assembly of organic nanowires within a conjugated polymer matrix yields blended emitting layers that are used in polymer light-emitting diodes (PLEDs). These PLEDs show significant enhancements in luminous efficiency and external quantum efficiency. The figure shows the structures of the materials used in the devices and the morphology of the organic nanowires.
Two-dimensional CdS nanosheet-based TFT and LED nanodevices.

Yu Ye,Bin Yu,Zhiwei Gao,Hu Meng,Hui Zhang,Lun Dai,Guogang Qin

DOI: https://doi.org/10.1088/0957-4484/23/19/194004

IF: 3.5

2012-01-01

Nanotechnology

Abstract:Semiconductor nanosheets have several unique applications in electronic and optoelectronic nanodevices. We have successfully synthesized single-crystalline n-type CdS nanosheets via a chemical vapor deposition (CVD) method in a Cd-enriched ambient. The as-synthesized nanosheets are typically 40-100 nm thick, 10-300 mu m wide, and up to several millimeters long. Using the nanosheets, we fabricated for the first time (to our knowledge), nano thin-film transistors (nano-TFTs) based on individual CdS nanosheets. A typical unit of such nanosheet TFTs has a high on-off ratio (similar to 1.7 x 10(9)) and peak transconductance (similar to 14.1 mu S), which to our knowledge are the best values reported so far for semiconductor nano-TFTs. In addition, we fabricated n-CdS nanosheet/p(+)-Si heterojunction light emitting diodes (LEDs) with a top electrode structure. This structure, where the n-type electrode is directly above the junction, has the advantage of a large active region and injection current favorable for high-efficiency electroluminescence (EL) and lasing. Room-temperature spectra of the LEDs consist of only an intense CdS band-edge emission peak (similar to 507.7 nm) with a full width at half-maximum of about 14 nm.
GeSe/WSe2 mixed dimensional p-n junction photoelectric properties

Bing Yan,Guoxin Zhang,Xuan Shi,Hongquan Zhao

DOI: https://doi.org/10.1039/d4cc03994g

IF: 4.9

2024-10-30

Chemical Communications

Abstract:Heterojunctions prepared utilizing diverse 2D materials enhance the variety of optoelectronic devices. Here, we present GeSe/WSe 2 mixed-dimensional p-n heterojunctions, which broaden the possibility of material combination and selection in 2D/layered heterojunction devices, while also providing material parameters to facilitate the development of optoelectronic devices based on 2D/layered semiconductor materials.

chemistry, multidisciplinary
A MoTe2-based Light-Emitting Diode and Photodetector for Silicon Photonic Integrated Circuits.

Ya-Qing Bie,Gabriele Grosso,Mikkel Heuck,Marco M. Furchi,Yuan Cao,Jiabao Zheng,Darius Bunandar,Efren Navarro-Moratalla,Lin Zhou,Dmitri K. Efetov,Takashi Taniguchi,Kenji Watanabe,Jing Kong,Dirk Englund,Pablo Jarillo-Herrero

DOI: https://doi.org/10.1038/nnano.2017.209

IF: 38.3

2017-01-01

Nature Nanotechnology

Abstract:Optical interconnect components based on bilayer MoTe 2 p–n junctions can be directly integrated with silicon photonics
Light Generation and Harvesting in a Van der Waals Heterostructure

Oriol Lopez-Sanchez,Esther Alarcon Llado,Volodymyr Koman,Anna Fontcuberta i Morral,Aleksandra Radenovic,Andras Kis

DOI: https://doi.org/10.1021/nn500480u

2014-03-12

Abstract:Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of semiconducting transition metal dichalcogenides MoS2 or WSe2 have been proposed as promising channel materials for field-effect transistors (FETs). Their high mechanical flexibility, stability and quality coupled with potentially inexpensive production methods offer potential advantages compared to organic and crystalline bulk semiconductors. Due to quantum mechanical confinement, the band gap in monolayer MoS2 is direct in nature, leading to a strong interaction with light that can be exploited for building phototransistors and ultrasensitive photodetectors. Here, we report on the realization of light-emitting diodes based on vertical heterojunctions composed of n-type monolayer MoS2 and p-type silicon. Careful interface engineering allows us to realize diodes showing rectification and light emission from the entire surface of the heterojunction. Electroluminescence spectra show clear signs of direct excitons related to the optical transitions between the conduction and valence bands. Our pn diodes can also operate as solar cells, with typical external quantum efficiency exceeding 4%. Our work opens up the way to more sophisticated optoelectronic devices such as lasers and heterostructure solar cells based on hybrids of two-dimensional (2D) semiconductors and silicon.

Mesoscale and Nanoscale Physics
Atomic-Scale Interface Engineering for Constructing p-CuPc/n-CdS Core–Shell Heterojunctions toward Light-Harvesting Application

Yiming Wu,Huanyu Zhang,Jinwen Wang,Jing Pan,Xiwei Zhang,Di Wu,Xiujuan Zhang,Jiansheng Jie

DOI: https://doi.org/10.1021/acsaem.0c01304

IF: 6.4

2020-08-12

ACS Applied Energy Materials

Abstract:Benefiting from the intrinsically different and complementary electronic functionalities, organic/inorganic semiconductor heterostructures offer many tantalizing opportunities to create high-performance, low-cost, multifunctional optoelectronic devices. Compared with their bulk counterparts, organic/inorganic core–shell heterojunction nanowires (NWs) possess superior performances in terms of fewer interface defects, sufficient interfacial interactions, and high carrier collection efficiency, as well as easy and flexible device integration. However, the precise spatial control and large-area synthesis of organic/inorganic core–shell heterostructures currently remain a complex and daunting task, mainly due to the large lattice mismatch and the energetically unfavorable nucleation interface between two distinct chemical constituents. Here, an organic NW-guided atomic layer heteroepitaxy strategy is developed to realize large-scale and spatially controlled synthesis of a new type of semiconductor heterostructures made of p-type single-crystalline copper phthalocyanine (CuPc) and n-type polycrystalline cadmium sulfide (CdS). By rationally engineering the surface chemistry of the organic NWs and controlling the nucleation condition of the CdS, p-CuPc/n-CdS heterostructures with on-demand structural morphologies and optical properties can be constructed. In addition, the delicately designed p-CuPc/n-CdS core–shell NWs exhibit good photovoltaic behavior and excellent photosensitivity with broadband spectrum detection from ultraviolet-visible to near-infrared. This work provides a promising route for developing novel functional p-CuPc/n-CdS core–shell heterojunctions, while demonstrating the great potential of this new type of hybrid system in high-performance broadband photodetection and photovoltaic device application.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.0c01304?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.0c01304</a>.SEM and TEM images of CdS nanotubes, schematic configuration, SEM image and performance of the single CdS nanotube-based photodetector; and schematic of the fabrication process of the single CuPc/CdS core–shell heterojunction nanodevice (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c01304/suppl_file/ae0c01304_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Bi 2 O 2 Se Nanowire/MoSe 2 Mixed-Dimensional Polarization-Sensitive Photodiode with a Nanoscale Ultrafast-Response Channel

Zecheng Chen,Jianming Huang,Mengmeng Yang,Xiao Liu,Zhaoqiang Zheng,Nengjie Huo,Lixiang Han,Dongxiang Luo,Jingbo Li,Wei Gao

DOI: https://doi.org/10.1021/acsami.3c05283

IF: 9.5

2023-06-20

ACS Applied Materials & Interfaces

Abstract:In recent years, polarization-sensitive photodiodes based on one-dimensional/two-dimensional (1D/2D) van der Waals (vdWs) heterostructures have garnered significant attention due to the high specific surface area, strong orientation degree of 1D structures, and large photo-active area and mechanical flexibility of 2D structures. Therefore, they are applicable in wearable electronics, electrical-driven lasers, image sensing, optical communication, optical switches, etc. Herein, 1D Bi(2)O(2)Se...

materials science, multidisciplinary,nanoscience & nanotechnology
A Mixed-Dimensional 1D Se-2D InSe Van Der Waals Heterojunction for High Responsivity Self-Powered Photodetectors.

Huiming Shang,Hongyu Chen,Mingjin Dai,Yunxia Hu,Feng Gao,Huihui Yang,Bo Xu,Shichao Zhang,Biying Tan,Xin Zhang,PingAn Hu

DOI: https://doi.org/10.1039/c9nh00705a

2020-01-01

Nanoscale Horizons

Abstract:Mixed-dimension van der Waals (vdW) p-n heterojunction photodiodes have inspired worldwide efforts to combine the excellent properties of 2D materials and traditional semiconductors without consideration of lattice mismatch. However, owing to the scarcity of intrinsic p-type semiconductors and insufficient optical absorption of the few layer 2D materials, a high performance photovoltaic device based on a vdW heterojunction is still lacking. Here, a novel mixed-dimension vdW heterojunction consisting of 1D p-type Se nanotubes and a 2D flexible n-type InSe nanosheet is proposed by a facile method, and the device shows excellent photovoltaic characteristics. Due to the superior properties of the hybrid p-n junction, the mix-dimensional van der Waals heterojunction exhibited high on/off ratios (103) at a relatively weak light intensity of 3 mW cm-2. And a broadband self-powered photodetector ranging from the UV to visible region is achieved. The highest responsivity of the device could reach up to 110 mA W-1 without an external energy supply. This value is comparable to that of the pristine Se device at 5 V and InSe device at 0.1 V, respectively. Furthermore, the response speed is enhanced by one order of magnitude over the single Se or InSe device even at a bias voltage. This work paves a new way for the further development of high performance, low cost, and energy-efficient photodetectors by using mixed-dimensional vdW heterostructures.
Multidimensional CdS nanowire/CdIn2S4 nanosheet heterostructure for photocatalytic and photoelectrochemical applications

Ting Wang,Yuanyuan Chai,Dekun Ma,Wei Chen,Weiwei Zheng,Shaoming Huang

DOI: https://doi.org/10.1007/s12274-017-1473-y

IF: 9.9

2017-04-29

Nano Research

Abstract:Nanomaterial shapes can have profound effects on material properties, and therefore offer an efficient way to improve the performances of designed materials and devices. The rational fabrication of multidimensional architectures such as one dimensional (1D)–two dimensional (2D) hybrid nanomaterials can integrate the merits of individual components and provide enhanced functionality. However, it is still very challenging to fabricate 1D/2D architectures because of the different growth mechanisms of the nanostructures. Here, we present a new solvent-mediated, surface reaction-driven growth route for synthesis of CdS nanowire (NW)/CdIn2S4 nanosheet (NS) 1D/2D architectures. The as-obtained CdS NW/CdIn2S4 NS structures exhibit much higher visible-light-responsive photocatalytic activities for water splitting than the individual components. The CdS NW/CdIn2S4 NS heterostructure was further fabricated into photoelectrodes, which achieved a considerable photocurrent density of 2.85 mA·cm−2 at 0 V vs. the reversible hydrogen electrode (RHE) without use of any co-catalysts. This represents one of the best results from a CdS-based photoelectrochemical (PEC) cell. Both the multidimensional nature and type II band alignment of the 1D/2D CdS/CdIn2S4 heterostructure contribute to the enhanced photocatalytic and photoelectrochemical activity. The present work not only provides a new strategy for designing multidimensional 1D/2D heterostructures, but also documents the development of highly efficient energy conversion catalysts.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology

A Mixed-Dimensional Light-Emitting Diode Based on a P-Mos2 Nanosheet and an N-Cdse Nanowire

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Improving Performance of Si/CdS Micro-/Nanoribbon P-N Heterojunction Light Emitting Diodes by Trenched Structure

Hot Carriers Assisted Mixed-Dimensional Graphene/mos2/p-Gan Light Emitting Diode

A Waveguide-Integrated Two-Dimensional Light-Emitting Diode Based on p-Type WSe 2 /n-Type CdS Nanoribbon Heterojunction

Surface Plasmon Enhanced Graphene/P-Gan Heterostructure Light-Emitting Diode by Ag Nano-Particles

Enhanced Visible to Near-Infrared Photodetectors Made from MoS2-based Mixed-Dimensional Structures

Unidirectional Doubly Enhanced MoS2 Emission Via Photonic Fano Resonances

p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices

Silver Nanoparticles-induced Enhancement of Light Extraction in Two-dimensional Light-emitting Diodes

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

Mixed-dimensional Vertical Bi2O2Se Nanopillars/si Heterojunctions with the Light Confinement Effect for High-Performance Photodetection

Enhancing the Performance of Polymer Light‐Emitting Diodes by Integrating Self‐Assembled Organic Nanowires

Two-dimensional CdS nanosheet-based TFT and LED nanodevices.

GeSe/WSe2 mixed dimensional p-n junction photoelectric properties

A MoTe2-based Light-Emitting Diode and Photodetector for Silicon Photonic Integrated Circuits.

Light Generation and Harvesting in a Van der Waals Heterostructure

Atomic-Scale Interface Engineering for Constructing p-CuPc/n-CdS Core–Shell Heterojunctions toward Light-Harvesting Application

Bi 2 O 2 Se Nanowire/MoSe 2 Mixed-Dimensional Polarization-Sensitive Photodiode with a Nanoscale Ultrafast-Response Channel

A Mixed-Dimensional 1D Se-2D InSe Van Der Waals Heterojunction for High Responsivity Self-Powered Photodetectors.

Multidimensional CdS nanowire/CdIn2S4 nanosheet heterostructure for photocatalytic and photoelectrochemical applications