Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction
Peixin Qin,Han Yan,Xiaoning Wang,Hongyu Chen,Ziang Meng,Jianting Dong,Meng Zhu,Jialin Cai,Zexin Feng,Xiaorong Zhou,Li Liu,Tianli Zhang,Zhongming Zeng,Jia Zhang,Chengbao Jiang,Zhiqi Liu
DOI: https://doi.org/10.1038/s41586-022-05461-y
IF: 64.8
2023-01-19
Nature
Abstract:Antiferromagnetic spintronics 1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16 is a rapidly growing field in condensed-matter physics and information technology with potential applications for high-density and ultrafast information devices. However, the practical application of these devices has been largely limited by small electrical outputs at room temperature. Here we describe a room-temperature exchange-bias effect between a collinear antiferromagnet, MnPt, and a non-collinear antiferromagnet, Mn 3 Pt, which together are similar to a ferromagnet–antiferromagnet exchange-bias system. We use this exotic effect to build all-antiferromagnetic tunnel junctions with large nonvolatile room-temperature magnetoresistance values that reach a maximum of about 100%. Atomistic spin dynamics simulations reveal that uncompensated localized spins at the interface of MnPt produce the exchange bias. First-principles calculations indicate that the remarkable tunnelling magnetoresistance originates from the spin polarization of Mn 3 Pt in the momentum space. All-antiferromagnetic tunnel junction devices, with nearly vanishing stray fields and strongly enhanced spin dynamics up to the terahertz level, could be important for next-generation highly integrated and ultrafast memory devices 7,9,16 .
multidisciplinary sciences