Electric Field Manipulated Multilevel Magnetic States Storage in FePt/(011) PMN-PT Heterostructure.

Xiaoyu Zhao,Jiahong Wen,Bo Yang,Huachen Zhu,Qingqi Cao,Dunhui Wang,Zhenghong Qian,Youwei Du

DOI: https://doi.org/10.1021/acsami.7b11015

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:In the current information society, the realization of magnetic storage technique with an energy efficient design and high storage density is greatly desirable. Here, we demonstrate that, without bias magnetic field, different values of remanent magnetization (Mr) can be obtained in a FePt/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) heterostructure by applying unipolar electric field across the substrate. These multilevel magnetic signals can serve as writing data bits in a storage device, which remarkably increase the storage density. As for the data reading, these multilevel Mr values can be read nondestructively and distinguishably using commercial giant magnetoresistance magnetic sensor by converting magnetic signal to voltage signal. Furthermore, these multilevel voltage signals show good retention and switching property, which enables the promising applications in electric-writing magnetic-reading memory devices with low-power consumption and high storage density.