Abstract:Recently, an atomic-scale two-dimensional silicon carbide monolayer has been synthesized {[}Polley \emph{et al., }Phys. Rev. Lett. \textbf{130},076203 (2023){]} which opens up new possibilities for developing next-generation electronic and optoelectronic devices. Our study predicts the pristine SiC monolayer to have an ``indirect'' band gap of 3.38 eV $(K\rightarrow M)$ and a ``direct'' band gap of 3.43 eV $(K\rightarrow K)$ calculated using the HSE06 functional. We performed a detailed investigation of the various possible defects (i.e., vacancies, foreign impurities, antisites, and their various combinations) on the structural stability, electronic, and optical properties of the SiC monolayer using a first-principles based density-functional theory (DFT) and molecular dynamics (MD) simulations. A number of physical quantities such as the formation energy, electronic band gap, and the effective masses of charge carriers, have been calculated. We report that the SiC monolayer has a very low formation energy of 0.57 eV and can be stabilized on TaC \{111\} film by performing the surface slab energy and interfacial adhesion energy calculations. Nitrogen doping is predicted to be the most favorable defect in silicon carbide monolayer due to its very low formation energy, indicating high thermodynamic stability. An interesting transition from semiconducting to metallic state is observed for $N_{C}$ and $Al_{Si}$ defective systems. For the pristine SiC monolayer, we find that the conduction band is nearly flat in the $M\rightarrow K$ direction, leading to a high effective mass of $3.48m_{o}$. A significant red shift in the absorption edge, as well as the occurrence of additional absorption peaks due to the defects, have been observed in the lower energy range of the spectrum.

The Mechanical and Electronic Properties of Carbon-Rich Silicon Carbide

Electronic Transport Properties of Silicon Carbide Molecular Junctions: First-Principles Study

Optical properties and Mechanical properties of C, Si, Ge and 3C-SiC Materials Calculated from First Principles Theory

Theoretical study of the band structure of 2H-SiC and 4H-SiC of silicon carbide polytypes

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Mechanical and Thermodynamic Properties of the Monoclinic and Orthorhombic Phases of SiC 2 N 4 under High Pressure from First Principles

Electronic structure of amorphous silicon carbide compounds

Ab initio study of electronic properties of CoSi2 and NiSi 2 in the fluorite structure

Effect of the point defect of silicon carbide cladding on mechanical properties: a molecular-dynamics study

First principles investigations in the carbon silicon system of novel tetragonal C8 (diamond) and Si8 allotropes and binary Si4C4 phase

Comparison and Assessment of Different Interatomic Potentials for Simulation of Silicon Carbide

Hardness and Electronic Properties of Si-C-N Structures

Native point defects and carbon clusters in 4H-SiC: A hybrid functional study

Density Functional Calculations on Silicon Carbide Nanostructures

Nuclear quantum effects in structural and elastic properties of cubic silicon carbide

Novel bonding patterns and optoelectronic properties of the two-dimensional Si$_x$C$_y$ monolayers

A first-principles study of the electronic, vibrational, and optical properties of planar SiC quantum dots

SiC siligraphene: a novel SiC allotrope with wide tunable direct band gap and strong anisotropy

Defect-driven tunable electronic and optical properties of two-dimensional silicon carbide

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H–SiC

New stable two dimensional silicon carbide nanosheets