A 65-Nm ReRAM-Enabled Nonvolatile Processor with Time-Space Domain Adaption and Self-Write-Termination Achieving $> 4\times $ Faster Clock Frequency and $> 6\times $ Higher Restore Speed
Zhibo Wang,Yongpan Liu,Albert Lee,Fang Su,Chieh-Pu Lo,Zhe Yuan,Jinyang Li,Chien-Chen Lin,Wei-Hao Chen,Hsiao-Yun Chiu,Wei-En Lin,Ya-Chin King,Chrong-Jung Lin,Pedram Khalili Amiri,Kang-Lung Wang,Meng-Fan Chang,Huazhong Yang
DOI: https://doi.org/10.1109/jssc.2017.2724024
IF: 5.4
2017-01-01
IEEE Journal of Solid-State Circuits
Abstract:With an ever-increasing demand for energy efficiency, processors with instant-on and zero leakage features are highly appreciated in energy harvesting as well as “normally off” applications. Recently, zero-standby power and fast switching nonvolatile processors (NVPs) have been proposed based on emerging nonvolatile memories (NVMs), such as ferroelectric RAM or spin-transfer-torque magnetic RAM. However, previous NVPs store all data to NVM upon every power interruption, resulting in high-energy consumption and degraded NVM endurance. This paper presents a 65-nm fully CMOS-logic-compatible ReRAM-based NVP supporting time-space domain adaption. It incorporates adaptive nonvolatile controller, nonvolatile flip-flops, and nonvolatile static random access memory (nvSRAM) with self-write termination. Data redundancy in both time and space domain is fully exploited to reduce store/restore time/energy and boost clock frequency. The NVP operates at >100 MHz and achieves 20 ns/0.45 nJ restore time/energy, realizing >6 $\times $ and >6000 $\times $ higher speed and energy efficiency of restore and >4 $\times $ faster operating frequency compared with that of state of the art.