Preparation and microwave dielectric properties of a new A 4 B 3 O 12 -type cation-deficient perovskite BaLa 3 Ti 2 NbO 12

L. Fang,Hong-Fei Liu,Hui Zhang,Zai-Quan Liu

DOI: https://doi.org/10.1007/s10853-005-2187-1

IF: 4.5

2006-01-01

Journal of Materials Science

Abstract:The dramatic advances during the last two decades in the microwave integrated circuit technology have brought a revolution in telecommunication and satellite broadcasting system. Dielectric resonators (DRs) provide significant advantages in terms of compactness, light weight, temperature stability, and relatively low cost in the production of high frequency devices. The important characteristics required for a DR are high dielectric constant (εr>25) for miniaturization, high quality factor (Q>2000) for selectivity and low temperature coefficient of resonant frequency (τ f <±20 ppm) for stability. Although several DR materials such as Ba(Zn1/3Ta2/3)O3, BaTi4O9, Ba2Ti9O20, (Zr, Sn)TiO4, and Ba6−3xRE8+2xTi18O54 (RE=Nd, Sm, and La) systems have been investigated for practical application [1, 2], the drive for further system miniaturization and improved filtering capabilities requires the development of new materials with higher dielectric constant and lower losses [3–8]. Recently, the microwave dielectric properties of some AnBn−1O3n (n=5, 6, 7 and 8) cationdeficient hexagonal perovskites such as A5B4O15 (A = Ba, Sr; B = Nb, Ta), MLa4Ti4O15 (M = Ba, Sr, and Ca), M2La4Ti5O18, Ba7Ti2Nb4O21 and Ba8Ti3Nb4O24 have been reported [9–19]. These ceramics are characterized by high dielectric constant up to 56, high quality factors with Qf up to 88000 GHz. However, there is no report so far on the microwave dielectric properties of any A4B3O12-type cation-deficient hexagonal perovskites, then it is worth-