Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Strain-Gradient Modulated Exciton Emission in Bent ZnO Wires Probed by Cathodoluminescence.

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Strain Gradient Induced Spatially Indirect Excitons in Single Crystalline ZnO Nanowires

Strain Induced Exciton Fine-Structure Splitting and Shift in Bent ZnO Microwires

Modifying Optical Properties of ZnO Nanowires Via Strain-Gradient

Strain Gradient Modulated Exciton Evolution and Emission in ZnO Fibers

Exciton Drift in Semiconductors under Uniform Strain Gradients: Application to Bent ZnO Microwires.

Strain-gradient Effect on Energy Bands in Bent ZnO Microwires.

Temperature Dependent Exciton Funnel Dynamics in Uniform Strain Gradient Field Observed by Time‐Resolved Photoluminescence

Strain-induced Spatially Indirect Exciton Recombination in Zinc-Blende/wurtzite CdS Heterostructures

Tailoring Exciton Dynamics by Elastic Strain-Gradient in Semiconductors.

Strain Loading Mode Dependent Bandgap Deformation Potential in ZnO Micro-/Nanowires.

Probing the Strain Effect on Near Band Edge Emission of a Curved ZnO Nanowire Via Spatially Resolved Cathodoluminescence

Linear Strain-Gradient Effect on the Energy Bandgap in Bent Cds Nanowires

Bandgap engineering and manipulating electronic and optical properties of ZnO nanowires by uniaxial strain.

On-nanowire Spatial Band Gap Design for White Light Emission.

Variation of exciton emissions of ZnO whiskers reversibly tuned by axial tensile strain.

Asymmetrical quantum dot growth on tensile and compressive-strained ZnO nanowire surfaces

Electronic and Mechanical Coupling in Bent ZnO Nanowires

Outermost Tensile Strain Dominated Exciton Emission in Bending CdSe Nanowires

Size-dependent bandgap modulation of ZnO nanowires by tensile strain.