Abstract:Because of the strong Coulomb interaction and quantum confinement effect, 2-dimensional transition metal dichalcogenides possess a stable excitonic population. To realize excitonic device applications, such as excitonic circuits, switches, and transistors, it is of paramount importance for understanding the optical properties of transition metal dichalcogenides. Furthermore, the strong quantum confinement in 2-dimensional space introduces exotic properties, such as enhanced phonon bottlenecking effect, many-body interaction of excitons, and ultrafast nonequilibrium exciton–exciton annihilation. Exciton diffusion is the primary energy dissipation process and a working horse in excitonic devices. In this work, we investigated time-resolved exciton propagation in monolayer semiconductors of WSe2, MoWSe2, and MoSe2, with a home-built femtosecond pump-probe microscope. We observed ultrafast exciton expansion behavior with an equivalent diffusivity of up to 502 cm2 s−1 at the initial delay time, followed by a slow linear diffusive regime (20.9 cm2 s−1) in the monolayer WSe2. The fast expansion behavior is attributed to energetic carrier-dominated superdiffusive behavior. We found that in the monolayers MoWSe2 and MoSe2, the energetic carrier-induced exciton expansion is much more effective, with diffusivity up to 668 and 2295 cm2 s−1, respectively. However, the “cold” exciton transport is trap limited in MoWSe2 and MoSe2, leading to negative diffusion behavior at later time. Our findings are helpful to better understand the ultrafast nonlinear diffusive behavior in strongly quantum-confined systems. It may be harnessed to break the limit of conventional slow diffusion of excitons for advancing more efficient and ultrafast optoelectronic devices.

Slow cooling and efficient extraction of C-exciton hot carriers in MoS 2 monolayer

Optically discriminating carrier-induced quasiparticle band gap and exciton energy renormalization in monolayer MoS2

Ultrafast dynamics of charge transfer in CVD grown MoS2-graphene heterostructure

New Pathway for Hot Electron Relaxation in Two-Dimensional Heterostructures.

Efficient hot-electron extraction in two-dimensional semiconductor heterostructures by ultrafast resonant transfer

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Exciton thermalization dynamics in monolayer MoS2: a first-principles Boltzmann equation study

Hot carrier extraction from 2D semiconductor photoelectrodes

Ultrafast Carrier Thermalization and Cooling Dynamics in Few-Layer MoS2.

Exploring hot carrier relaxation dynamics in MoSi 2 N 4 monolayer for photocatalytic applications: Insights into electron-phonon coupling mechanisms

Dynamics of exciton energy renormalization in monolayer transition metal disulfides

Efficient Optical Modulation of Exciton State Population in Monolayer MoS2 at Room Temperature

Energy transfer driven brightening of MoS 2 by ultrafast polariton relaxation in microcavity MoS 2 /hBN/WS 2 heterostructures

Transient Superdiffusion of Energetic Carriers in Transition Metal Dichalcogenides Visualized by Ultrafast Pump-Probe Microscopy

Defect-mediated Exciton Localization and Relaxation in CVD-grown Monolayer MoS2

Electron-hole pair condensation in Graphene/MoS2 heterointerface

Low-temperature photocarrier dynamics in monolayer MoS2

Spontaneous Exciton Dissociation in Transition Metal Dichalcogenide Monolayers

Modulation of Carrier Lifetime in MoS2 Monolayer by Uniaxial Strain

Energy Transfer Driven Brightening of MoS2 by Ultrafast Polariton Relaxation in Microcavity MoS2/hBN/WS2 Heterostructures

Momentum resolved ground/excited states and the ultra-fast excited state dynamics of monolayer MoS2