Vertical Spin Hall Magnetoresistance Inta1−xptx/yigbilayers

J. H. Han,G. Y. Shi,X. J. Zhou,Q. H. Yang,Y. H. Rao,G. Li,H. W. Zhang,F. Pan,C. Song
DOI: https://doi.org/10.1103/physrevb.94.134406
2016-01-01
Abstract:The spin Hall effect and the magnetic proximity effect are two main sources of the magnetoresistance (MR) effects in heavy metal/ferromagnet bilayers, where they play isolated roles but are usually contaminated by each other. In Ta1-xPtx/YIG (= Y3Fe5O12) bilayers consisting of Ta and Pt nanograins, these effects are intrinsically coupled to generate new MR with 360 degrees direction sensitivity to the magnetic field and proportionality to the out-of-plane magnetization of YIG. Due to the opposite spin Hall angle of Ta and Pt, vertical spin accumulation is generated via the spin Hall effect at the transverse boundaries between Ta and Pt grains. The spin-dependent scattering by the proximity-induced Pt magnetization finally leads to the MR, which is named as vertical spin Hall MR taking the role of spin Hall angle into account. Besides fundamental insight to spin transport physics, our work provides an approach to detecting perpendicular magnetization in a variety of magnets.
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