Controlling Chain Conformations of High‐k Fluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single‐Crystal Field‐Effect Transistors

Jwala M. Adhikari,Matthew R. Gadinski,Qi Li,Kaige G. Sun,Marcos A. Reyes-Martinez,Elissei Iagodkine,Alejandro L. Briseno,Thomas N. Jackson,Qing Wang,Enrique D. Gomez
DOI: https://doi.org/10.1002/adma.201602873
IF: 29.4
2016-01-01
Advanced Materials
Abstract:A novel photopatternable high-k fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant (k) between 8 and 11 is demonstrated in thin-film transistors. Crosslinking P(VDF-BTFE) reduces energetic disorder at the dielectric-semiconductor interface by controlling the chain conformations of P(VDF-BTFE), thereby leading to approximately a threefold enhancement in the charge mobility of rubrene single-crystal field-effect transistors.
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