Dynamic in situ observation of voltage-driven repeatable magnetization reversal at room temperature

Ya Gao,Jia-Mian Hu,C. T. Nelson,T. N. Yang,Y. Shen,L. Q. Chen,R. Ramesh,C. W. Nan

DOI: https://doi.org/10.1038/srep23696

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Purely voltage-driven, repeatable magnetization reversal provides a tantalizing potential for the development of spintronic devices with a minimum amount of power consumption. Substantial progress has been made in this subject especially on magnetic/ferroelectric heterostructures. Here, we report the in situ observation of such phenomenon in a NiFe thin film grown directly on a rhombohedral Pb(Mg 1/3 Nb 2/3 ) 0.7 Ti 0.3 O 3 (PMN-PT) ferroelectric crystal. Under a cyclic voltage applied perpendicular to the PMN-PT without a magnetic field, the local magnetization of NiFe can be repetitively reversed through an out-of-plane excursion and then back into the plane. Using phase field simulations we interpret magnetization reversal as a synergistic effect of the metastable ferroelastic switching in the PMN-PT and an electrically rotatable local exchange bias field arising from the heterogeneously distributed NiO clusters at the interface.