Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

Intrinsic Grain Boundary Structure and Enhanced Defect States in Air‐Sensitive Polycrystalline 1T'‐WTe2 Monolayer

In Situ Atomistic Observation of Grain Boundary Migration Subjected to Defect Interaction

Direct Visualization of Large‐Scale Intrinsic Atomic Lattice Structure and Its Collective Anisotropy in Air‐Sensitive Monolayer 1T’‐ WTe 2

Formation Mechanism of Twin Domain Boundary in 2D Materials: the Case for WTe2

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

Atomic Resolution Imaging of Highly Air-Sensitive Monolayer and Twisted-Bilayer WTe 2

Structural Transition and Migration of Incoherent Twin Boundary in Diamond

Observation of Edge States in Multilayer WTe2

Defect dependent electronic properties of WTe2: A first-principles study

Structures and transitions in bcc tungsten grain boundaries and their role in the absorption of point defects

Influence of point defects on the electronic and topological properties of monolayer WTe$_2$

Edge superconductivity in multilayer WTe<sub>2</sub> Josephson junction

Defect Structure of Localized Excitons in A Wse2 Monolayer

Large-area synthesis of high-quality monolayer 1T'-WTe2 flakes

Grain-interior Planar Defects Induced by Heteroatom Monolayer

Terahertz Response of Monolayer and Few-Layer WTe_2 at the Nanoscale

Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances

In Situ Structural Dynamics of Atomic Defects in Tungsten Oxide

Chemical Selectivity at Grain Boundary Dislocations in Monolayer Mo1-Xwxs2 Transition Metal Dichalcogenides

Influence of Point Defects on the Electronic and Topological Properties of Monolayer WTe_2

Strain Tunable Semimetal-Topological-Insulator Transition in Monolayer 1T-WTe<sub>2</sub>