Electrically Enhanced Magnetization in Highly Strained BiFeO3 Films

Jan-Chi Yang,Chang-Yang Kuo,Heng-Jui Liu,Hang-Chen Ding,Chun-Gang Duan,Hong-Ji Lin,Zhiwei Hu,Tun-Wen Pi,Liu Hao Tjeng,Chien-Te Chen,Elke Arenholz,Qing He,Ying-Hao Chu

DOI: https://doi.org/10.1038/am.2016.55

IF: 10.761

2016-01-01

NPG Asia Materials

Abstract:The control of magnetism via an electric field has attracted substantial attention because of potential applications in magnetoelectronics, spintronics and high-frequency devices. In this study, we demonstrate a new approach to enhance and control the magnetization of multiferroic thin film by an electric stimulus. First, to reduce the strength of the antiferromagnetic superexchange interaction in BiFeO3, we applied strain engineering to stabilize a highly strained phase. Second, the direction of the ferroelectric polarization was controlled by an electric field to enhance the Dzyaloshinskii–Moriya interaction in the highly strained BiFeO3 phase. Because of the magnetoelectric coupling in BiFeO3, a strong correlation between the modulated ferroelectricity and enhanced magnetization was observed. The tunability of this strong correlation by an electric field provides an intriguing route to control ferromagnetism in a single-phase multiferroic. A highly strained thin film that switches magnetic spins using electricity may advance low-power spintronic technology. Multiferroics are magnets that also have permanent electric polarization — a combination that can enable spins to be used in logic or memory devices if the electric and magnetic coupling forces are strong enough. Now, Ying-Hao Chu of National Chiao Tung University in Taiwan and co-workers have boosted the naturally weak magnetism of the multiferroic material bismuth ferrite (BiFeO3) by depositing it as a thin film on neodymium-based crystals. The significant epitaxial strain between the lattice-mismatched interfaces induced spontaneous magnetization, which could be enhanced by applying electric fields. Perfectly aligned nanoscale magnetic patterns were generated when a modest voltage was applied to the highly distorted BiFeO3 thin films via an atomic force microscope tip. Electrical control of the spin degree of freedom has enabled various vital applications in modern electronic devices, ranging from magnetoelectronics and spintronics to high-frequency devices. We demonstrate a new approach to ‘write’ enhanced magnetization in a single-phase multiferroic thin film by the application of an electric field. The induced magnetization can be controlled with nanoscopic precision via the assistance of scanning probe techniques, thus offering high potential for use in multifunctional, low power consumption and green nanoelectronics.