A 16-bit 10Gsps current steering RF DAC in 65nm CMOS achieving 65dBc ACLR multi-carrier performance at 4.5GHz Fout

Gil Engel,Martin Clara,Haiyang Zhu,Paul Wilkins
DOI: https://doi.org/10.1109/VLSIC.2015.7231252
2015-01-01
Abstract:This paper presents an RF DAC fabricated in a 65nm 1p7m CMOS process. The DAC is capable of >10Gsps operation dissipating ~800mW. At 3Gsps the SFDR > 70dBc beyond 1GHz and the IM3 performance is <; -80dBc within the same range. Signal processing is incorporated into the DAC providing interpolation and modulation through the full Nyquist band. Features and performance enable a wide application range including cable infrastructure, wireless communications, instrumentation, defense & aerospace. These performance capabilities are enabled by a modified DAC switch output structure and a novel current source calibration scheme <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup> .
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