Abstract:A simple and convenient method was developed for the preparation of a large number of high-purity cotton-like SiC@SiO 2 nanowires by thermal evaporation without any catalyst. The Si particles with loose and discontinuous SiO 2 coating (marked as Si@SiO 2 ) were prepared by wet oxidation process as the source of silicon, and the high-purity graphite sheets were used as carbon sources. The large-scale of high purity SiC@SiO 2 nanowires, which were over 100 μm in length and about 100 nm in diameter, were synthesized by the form of layers assembly of the graphite substrate according to the distribution of gas. The SiC@SiO 2 nanowires have high crystallinity with flat and smooth surfaces. The synthesized SiC@SiO 2 nanowires include single crystal 3C structures and 3C structures with defects along [111] direction. The distribution of the gas concentration in the reaction vessel and the growth mechanism of the SiC@SiO 2 nanowires were studied. Furthermore, the SiC@SiO 2 nanowires showed good blue-green photoluminescence (PL) property, which has been expected to make positive progress in the optoelectronic field.

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