Combined Effects of Guard Rings and Buried N(+) Layer on Mitigating Charge Collection and Charge Sharing in 90 Nm Cmos Process

Wanli Zhang,Shaoan Yan,Minghua Tang,Xinyu Xu,Yanhu Mao,Pengcheng Huang

DOI: https://doi.org/10.4028/www.scientific.net/amm.513-517.303

2014-01-01

Applied Mechanics and Materials

Abstract:A model of combining of guard rings and buried n(+) layer in mitigating charge collection and charge sharing is presented in this paper. 3-D TCAD simulation results indicate that for 90-nm CMOS process, PMOS charge collection and charge sharing can be mitigated more effectively with the combination model than the solely use of guard rings or buried n(+) layer. With the combination, a noticeable improvement on angled ion strikes is also represented. The model shows a significant advantage in high-energy ion strikes and angled ion strikes.