Abstract:The D-A structured small-molecule-based resistive random-access memory (ReRAM) device has been well-researched in the last decade, and the switching mechanism was mainly induced by the intramolecular/intermolecular charge transfer processes from the donors to the acceptors. However, in the previous work, some small molecules with pristine electron acceptors in the backbone could still show the typical memory behaviors, of which the switching mechanism is still ambiguous. In this work, two 1,2,4,5-tetrazine based n-type small-molecular isomers, 2-DPTZ and 4-DPTZ, with the same electron acceptor, 1,2,4,5-tetrazine and pyridine, are chosen to investigate the isomeric effects on molecular packing, switching mechanism, and memory performance. Because of the abundant nitrogen atoms with a localized lone pair of electrons in the sp2 orbital, 2-DPTZ and 4-DPTZ compounds could self-assemble into a long-range ordered molecular packing through intermolecular C-H...N interactions, affording effective transporting tunnels for charge-carrier transport. As expected, the sandwich-structured ITO/2-DPTZ or 4-DPTZ/Al memory devices both showed binary memory characteristics, with 2-DPTZ based memory devices showing the write once read many times (WORM) memory behavior and 4-DPTZ based memory devices having the negative differential resistance (NDR) memory performance. These distinct ReRAM properties arose from the different morphologies of 2-DPTZ and 4-DPTZ films that were induced by the different packing styles between the adjacent molecules, as confirmed by X-ray diffraction (XRD) and tapping-mode atomic force microscopy (AFM) height images. Most importantly, the switching mechanism was thought to be attributed to the injected electrons that reduced the neutral molecules of 2-DPTZ and 4-DPTZ to their corresponding anion radicals. Thus, this present work helps us better understand the conducting mechanism of small molecules with pristine electron acceptors in the backbone and provides a supplementary guideline for designing multilevel small molecules to match the structure-stacking-property relationship.

Insertion of Conjugated Bridges in Organic Backbone for Better Multilevel Memory Performance: the Role of Alkynyl Group

Study of Electronic and Steric Effects of Different Substituents in Donor–Acceptor Molecules on Multilevel Organic Memory Data Storage Performance

A benzothiadiazole-containing π-conjugated small molecule as promising element for nonvolatile multilevel resistive memory device

Synthesis, characterization, and memory performance of two phenazine/triphenylamine-based organic small molecules through donor-acceptor design

Organic Memory Device and Synaptic Simulation Based on Indacenodithienothiophene (IDTT) Copolymers with Improved Planarity

Exploring the Potential of Malononitrile Functionalized Donor-Acceptor Systems for Non-Volatile Memory Device Applications

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Negative effect on molecular planarity to achieve organic ternary memory: triphenylamine as the spacer

Synergy Effect of Porphyrin Units and Alkynyl pi Bridges Tunes the Memory Behavior and Threshold Voltage of Hyperbranched Polyimides

Tuning Memory Performances from Worm to Flash or Dram by Structural Tailoring with Different Donor Moieties

Improving the ON/OFF Ratio and Reversibility of Recording by Rational Structural Arrangement of Donor–Acceptor Molecules

Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C–H...N Interaction and Anion Radicals for Stable ReRAM Performance

Nonvolatile Ternary Resistive Memory Performance of a Benzothiadiazole-Based Donor–Acceptor Material on ITO-Coated Glass

Improving the ON/OFF Ratio and Reversibility of Recording by Rational Structural Arrangement of Donor-Acceptor Molecules

Preparation of Homopolymers from New Azobenzene Organic Molecules with Different Terminal Groups and Study of Their Nonvolatile Memory Effects

4,5-Diazafluorene-based Donor-Acceptor Small Molecules As Charge Trapping Elements for Tunable Nonvolatile Organic Transistor Memory

Inserting Phenylethynyl Linker into Triphenylamine-Based Hyperbranched Polyimide for Effectively Tuning Memory Performance

Ternary Memory Devices Based on Copolymers of Dipyrido[3,2-a:2′,3′-c]phenazine Acceptor and Multiple Donors

Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C-H center dot center dot center dot N Interaction and Anion Radicals for Stable ReRAM Performance

A High‐Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors

Side Chain Engineering Enhances the High-Temperature Resilience and Ambient Stability of Organic Synaptic Transistors for Neuromorphic Applications