Abstract:The influence of deposition time on the properties of SnS films grown using the thermal evaporation was reported. The deposition time was varied between 0.7 – 3 min, keeping other deposition variables constant. The layers showed single phase with orthorhombic crystal structure, exhibiting a strong (040) reflection. With an increase of deposition time, the Sn/S atomic ratio and grain size and the number of crystallites in the layers increased while the dislocation density and bulk resistivity decreased. The increase of crystallinity of the layers was confirmed by the change of strain from tensile to compressive with increasing deposition time. The transmittance of the films were > 70% for deposition time ≤ 1min and decreased drastically otherwise. The energy band gap varied in the range 1.80 - 1.30 eV with the lower values obtained at longer deposition times.

Influence of Deposition Time on the Properties of Highly-Oriented Sns Thin Films Prepared Using the Thermal Evaporation Method