Abstract:As the demand for electronic devices increases continually, the spintronic materials have played an important role in materials science and electronics. Spintronic devices have excellent properties such as non-volatility, low power consumption, and high integration compared with conventional semiconductor devices. In this paper, we investigate the electronic structure, magnetic and optical properties of the semiconductor GaSb doped with 3d transition metal Cr, based on first-principles calculations. The compounds are constructed by replacing some Ga atoms with Cr in zinc-blende GaSb semiconductor, where the concentrations of the Ga atoms replaced are 0, 0.25, 0.50, and 0.75. We adopt the projected plane wave method and the electronic exchange correlation functional PBE in the generalized gradient approximation. Band gap is modified by Heyd-Scuseria-Ernzerhof (HSE06) functional. We study the equilibrium lattice constants of Cr-doped GaSb in zinc-blende structure at different concentrations. The energy of nonmagnetic, ferromagnetic and antiferromagnetic states at the equilibrium lattice constants are compared to identify the ground state. For Ga1–xCrxSb (x = 0.25, 0.50, 0.75), we find that the most stable state is ferromagnetic state. In the electronic structure of the ground state, the spin-up bands pass through the Fermi level while the spin-down bands each have a direct band gap. The Ga1–xCrxSb exhibit ferromagnetic half-metallic properties. The magnetic properties at different lattice constants under different concentrations are studied. Our analysis indicates that the Ga1–xCrxSb have integer Bohr magnetic moments of 3.0, 6.0, 9.0 μB for x = 0.25, 0.50 and 0.75, respectively. We find that when the lattice changes fom –5% to 20%, the total magnetic moment for each of Ga1–xCrxSb still remains the integer Bohr magnetic moment, and the magnetic moment of the Cr increases with the lattice constant increasing. We also find that the ferromagnetisms of Ga1–xCrxSb have Curie temperatures above room temperature, estimated by mean-field method. The p-d electron hybridization occurs in Cr-3d orbital and Sb-5p orbital, and the electron state density distribution of Cr-3d is transferred, that is, the electron orbital hybridization makes the total electron state density of crystal material redistributed, which is the main reason why Ga1–xCrxSb (x = 0.25, 0.50, 0.75) present ferromagnetic half-metallic properties. Additionally, the Ga1–xCrxSb have good absorption ability in the infrared region, compatible with zinc-blende semiconductors such as GaSb, which makes Ga1–xCrxSb have promising potential applications in both spintronic devices and infrared optoelectronic devices.

Structural, Electronic and Optical Properties of Zn0.5Cr0.5S from First-Principles

First-principles Calculations of Magnetic and Optical Properties of Ga1–xCrxSb (x = 0.25, 0.50, 0.75)

First-principles study of structural, electronic and magnetic properties of diluted magnetic semiconductor and superlattices based‏ on Cr-doped ZnS and ZnSe compounds in wurtzite-type crystal

Tuning the magnetic properties of doped ZnS using transition metal doping: A multi-scale computational approach

Cr-doped CdS and ZnS nano/micro structure with ferromagnetic properties

Influence of chromium concentration on the structural, electronic structure, optical and temperature dependent magnetic properties of ZnS nanocrystals

Design and characterization of structural, mechanical, electronic, and optical properties of CrxMo1-xS2 alloys for advanced material applications

Electronic, magnetic and optical properties of Cr and Fe doped ZnS and CdS diluted magnetic semiconductors: revised study within TB-mBJ potential

First-principles study of the structure, electronic and optical properties of monolayer ZrX3 (X = S, Se, Te)

First-principles Study on Electronic Structure and Half-Metallic Ferromagnetism of Ternary Compound ZnCrS_2

Impact of Cr doping on the structure, optical and magnetic properties of nanocrystalline ZnO particles

Influence of Group-IVA Doping on Electronic and Optical Properties of ZnS Monolayer: A First-Principles Study

Electronic structure and optical properties of ZnX (X=O, S, Se, Te)

Electronic Structure and Optical Properties of Sb Doped on ZnO

Structural, magnetic, and optoelectronic properties of new ferromagnetic semiconductors Cd0.75Os0.25S and Cd0.75Ir0.25S: Insight from DFT computations

Room Temperature Ferromagnetic and Optical Properties of Chrome Doped ZnS Nanorods Prepared by Hydrothermal Method

A DFT study of structural, optical, and elastic properties of the transition metal chalcogenide compounds SrXSe3 (X = Ti or Zr)

First-principles calculations to investigate structural, electronic and optical properties of two-dimensional ZnIn2S4

A first-principles investigation of electronic structure and ferromagnetic properties in alkali metal-doped ZnS/Se semiconductors

First-Principles Study on the Half-Metallic Ferromagnetism of Zinc-Blende Structural Scx (X = C, Si, Ge, and Sn)

Effect of non-metallic doping on the electronic structure and optical properties of ZrSe2