Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

PREDICTION OF THERMAL RADIATIVE PROPERTIES OF SEMICONDUCTORS FROM FIRST PRINCIPLES

Ab Initio Calculations of Thermal Radiative Properties: the Semiconductor Gaas

Intrinsic lattice thermal conductivity of semiconductors from first principles

Far Infrared Thermal Radiative Properties Of Polar Materials From First-Principle Simulations

A first-principles molecular dynamics approach for predicting optical phonon lifetimes and far-infrared reflectance of polar materials

First-Principles Predictions of Thermoelectric Figure of Merit for Organic Materials: Deformation Potential Approximation

First-Principles Molecular Dynamics Investigation of the Atomic-Scale Energy Transport: From Heat Conduction to Thermal Radiation

Thermal conductivity prediction by atomistic simulation methods: Recent advances and detailed comparison

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Thermal conductivity spectrum calculation from first-principles-based harmonic phonon theory

First-principles Predictions of Temperature-Dependent Infrared Dielectric Function of Polar Materials by Including Four-Phonon Scattering and Phonon Frequency Shift

Radiative Properties Of Gaas From First Principles Calculations

Thermal conductivity of intrinsic semiconductor at elevated temperature: role of four-phonon scattering and electronic heat conduction

Comprehensive first-principles analysis of phonon thermal conductivity and electron-phonon coupling in different metals

Phonon properties and thermal conductivity from first principles, lattice dynamics, and the Boltzmann transport equation

Sampling-accelerated First-principles Prediction of Phonon Scattering Rates for Converged Thermal Conductivity and Radiative Properties

Exciton Dispersion and Exciton-Phonon Interaction in Solids by Time-Dependent Density Functional Theory

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Optical conductivity of metals from first principles

An ab initio based approach to optical properties of semiconductor heterostructures