Abstract:HfO2 is one of the alternative candidate gate materials for SiO2 in electronic devices, because of its high dielectric constant (ε ≈ 25). Space charges and defects are more favorable to be accumulated at the oxide-substrate interface, which plays a key role in the electrical properties of electronic devices. However, it is still unclear that how the defects affect the electrical performance of devices. In this paper, the effect of oxygen vacancy (Vo) on the electronic structure of the HfO2/Si interface and electrical properties of devices was analyzed by using the density functional theory. The 2-layer model of HfO2/Si was built, and then the Vo was introduced into the interface through first-principles calculation method. The interfacial electronic levels, states, and localization functions of these two models were calculated with the assistance of Quantum Espresso software. It was found that the interaction between atoms such as Si-O and Hf-O at HfO2/Si interface is weaker than that in the SiO2 and HfO2, respectively. It means that the point defects are easy to be formed at the HfO2/Si interface. The interfacial state is originated from Si and Hf atoms, which is quite different from the bulk state and responsible to the electrical performance of devices. Compare with Hf, the Si near VO processes greater electron affinity and thus has more ability to capture electrons, leading to the electrostatic breakdown eventually. Our research work revealed the reason why the interfacial states were formed and the physical mechanism of the effect of interfacial states on the electrical properties of the device from the electronic level. It is expected that these results can be benefited to the structural design and performance optimization for electronic devices.

Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO2 Interfaces

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Sulfur Passivation Effect on HfO2/GaAs Interface: A First-Principles Study

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Distortion Of Electronic Structure In Hfo2 Induced By The Out-Diffused As From Gaas Substrate

Impact of the Al/Hf Ratio on the Electrical Properties and Band Alignments of Atomic-Layer-Deposited Hfo2/Al2o3 on S-Passivated Gaas Substrates

Electronic and Atomic Structure of Metal-Hfo2 Interfaces

Effect of Oxygen Vacancy on the Electronic Structure and Electrical Properties of HfO2/Si Interface

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

Impacts of Crystal Orientation of Gaas on the Interfacial Structures and Electrical Properties of Hf0.6la0.4ox Films

Density Functional Calculations on Atomic and Electronic Structures of Amorphous Hfo2/Si(001) Interface

Density functional theory simulations of amorphous high-κ oxides on a compound semiconductor alloy: a-Al2O3/InGaAs(100)-(4×2), a-HfO2/InGaAs(100)-(4×2), and a-ZrO2/InGaAs(100)-(4×2)

Quantum Chemical Study of the Initial Surface Reactions of HfO2 Atomic Layer Deposition on the Hydroxylated GaAs(001)-4×2 Surface

Theoretical investigation the growth of Fe3Si on GaAs: Stability and electronic properties of Fe3Si/GaAs(0 0 1), (1 1 0) via DFT

Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

Impacts of Oxygen Source on Band Alignment of ALD Al2O3/(α-, Ε-)Ga2o3 Interface

Fabrication and interface properties of amorphous Ga2O3/GaAs heterojunction

Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Study of the Bonding Characteristics at Β-Ga2o3(201)/4h-sic(0001) Interfaces from First Principles and Experiment