Abstract:We present a first-principles study on the phase-dependent doping effects on the photocatalytic activity of TiO2. Three TiO2 polymorphs-anatase, rutile, and brookite-doped with H, N, or both of them were systematically investigated to understand the mechanism for the improvement of photocatalytic performance induced by the doping. Our calculations revealed that the doping effect; on the electronic properties of TiO2 are phase-dependent. The n-type TiO2 was formed by the introduction of hydrogen interstitial or substitution, although interstitial state is stable for hydrogen in all of the TiO2 structures, revealing that hydrogen is one of important sources for the n-type character of TiO2. All of the bandgaps of TiO2 polymorphs were slightly narrowed by interstitial hydrogen, while only the bandgaps of brookite and rutile TiO2 were narrowed by substitutional hydrogen. Nitrogen also prefers the interstitial state in all of the TiO2 polymorphs. However, the effects of interstitial nitrogen on the electronic properties of TiO2 are phase-dependent: anatase and brookite TiO2 with interstitial nitrogen keep intrinsic and their bandgaps are unchanged, while rutile TiO2 with interstitial nitrogen shows p-type conductivity and bandgap narrowing. Our calculation further predicted that nitrogen substitution is enhanced in the presence of hydrogen interstitial bonded to nitrogen due to the reduced formation energy. The narrowing of the bandgaps, the improved mobility, intrinsic semiconducting characters, and reduced trapping centers in anatase and brookite TiO2 by the (H, N)-codoping result in the improvement of their photocatalytic performance because of the enhancement of absorption in visible light and reduction of recombination centers, while the performance of rutile TiO2 has not been improved because its bandgap is almost unaffected by the codoping.

Effects of Oxygen Doping on Optical Band Gap and Band Edge Positions of Ta3N5 Photocatalyst: A GGA + U Calculation

Doping Effects of Ta on Conductivity and Microwave Dielectric Loss of MgTiO<sub>3</sub> Ceramics

The Effects of Nonmetal Dopants on the Electronic, Optical and Chemical Performances of Monolayer G–c3n4 by First-Principles Study

Effects of Ba–O codoping on the photocatalytic activities of Ta3N5 photocatalyst: a DFT study

Compensation of Band-Edge Positions in Titanium-Doped Ta 3 N 5 Photoanode for Enhanced Water Splitting Performance: A First-Principles Insight

Effects of Oxygen Impurities and Nitrogen Vacancies on the Surface Properties of the Ta3N5photocatalyst: a DFT Study

Effects of Oxygen Impurity Concentration on the Interfacial Properties of Ta3N5/Ta5N6 Composite Photoelectrode: A DFT Calculation

Charge Compensation Doping to Improve the Photocatalytic and Photoelectrochemical Activities of Ta3N5: A Theoretical Study

First Principles Calculations of the Electronic Structure and Optical Properties of Pure and (nb, N) Co-Doped Anatase

Role of oxygen impurity on the mechanical stability and atomic cohesion of Ta₃N₅ semiconductor photocatalyst.

Effect of Tantalum Doping on the Fe2O3 toward Photoelectrochemical Water Oxidation

First-Principles Study of the Influences of Oxygen Defects Upon the Electronic Properties of Nb-Doped Tio2 by Gga + U Methods

Effects of Mg–Zr Codoping on the Photoelectrochemical Properties of a Ta3N5semiconductor: a Theoretical Insight

29 Effect of 3d transition-metal (M) doping in In1-xMx TaO4 photocatalysts on water splitting under visible light irradiation

Effects of La-N Co-Doping of BaTiO3 on Its Electron-Optical Properties for Photocatalysis: A DFT Study

Distribution and concentration of surface oxygen vacancy of TiO<sub>2</sub>and its photocatalytic activity

Photonic, and Photocatalytic Behavior of Tio2 Mediated by Fe, Co, Ni, N Doping and Co-Doping

Effects of H-, N-, and (H, N)-Doping on the Photocatalytic Activity of TiO2

Bandgap Engineering of KTaO3 for Water-Splitting by Different Doping Strategies

First-principles calculation of nitrogen-tungsten codoping effects on the band structure of anatase-titania

Suppression of Point Defects for Band Edge Engineering in a Semiconducting Photocatalyst.